The effect of metal work function on current conduction in metal-insulator-semiconductor (MIS) tunnel junctions has been investigated both experimentally and theoretically. MIS junctions on 2 and 10 Ω cm silicon substrates have been fabricated with both aluminum and magnesium contacts. It is shown that in the region of tunnel-limited current conduction, device characteristics are dependent on the metal work function. The results are in good agreement with predictions from a comprehensive analytical model. The implication of this result for MIS-inversion layer solar cells, where contact current densities are much larger than in transparent metal MIS devices, is examined.
A new form of paralldism, distributed bit-parallelism, is introduced. A DBP organization distributes each bit of a data item to a different processor. DBP allows computation that is sublinear with word size for such operations as integer addition, arithmetic shifts, and data moves. The implications of DBP for system architecture are analyzed. An implementation of a DPB architecture based on a mesh with a fast-bypass network is presented, and the performance of DBP aJgorithrns on this architecture is analyzed. The application of the architecture to early vision algorithms is discussed.
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