An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

Aguirre-Morales, Jorge-Daniel; Fregonèse, Sébastien; Mukherjee, Chhandak; Maneux, Cristell; Zimmer, Thomas

doi:10.1109/ted.2015.2487243

Cited by 23 publications

(24 citation statements)

References 35 publications

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“…These leakage currents are low enough for gate oxides to be considered as ‘working’. Contact resistance values varied between 18 kΩ to 27 kΩ, which were extracted using a model proposed in . We note that these devices were not optimized with regards to their contact resistance values.…”

Section: Resultsmentioning

confidence: 99%

“…In order to further validate the assumptions made to explain the observed device characteristics, the experimental data was fitted using an established compact model described in . The model is developed in Verilog‐A language and is validated against experimental data from BSBGFETs with electrically tunable band gap published in literature.…”

Section: Resultsmentioning

confidence: 99%

“…Experimental data from a BiGFET fitted against a compact model developed for Bernal stacked bilayer GFETs at various back‐gate voltage conditions. The value for the band gap in the model has been set to 0, based on the experimental results of this work.…”

Section: Resultsmentioning

confidence: 99%

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Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

et al. 2017

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We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

et al. 2017

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“…Many other GFETs modelling has also reported the intrinsic transit frequency comparable to or higher than similar size CMOS nanometre technology [9][10][11][12], some other reports drain current formulation for the GFETs based on drift-diffusion equation [13][14][15]. A virtual source technique, basic physics based [16][17][18] and quasi-ballistic transport mechanism or MFT based [19][20][21] also has been reported. Two best fit transport approaches of an electron through the channel used for the formulation of drain current are Landauer's charge based and Mckelvey's flux based.…”

Section: Introductionmentioning

confidence: 94%

Nonlinearity, Scaling Trends of Quasi-Ballistic Graphene Field Effect Transistors Targeting RF Applications

Munindra

Nand

2021

Preprint

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Ballistic transport based graphene field effect transistor (GFET) is the emerging nanoelectronics device technology, which is promising to add a new dimension to electronic devices and to replace conventional silicon technology, especially for radio frequency applications. In this paper, the radio (GHz) frequency static linearity and nonlinearity performance potential are analyzed for the ballistic approach GFET under the ballistic transport regime. This work explores the static linearity of graphene FET mathematically under the quasi-ballistic transport regime along with the scaling outlook of the GFETs at four different channel lengths. The proposed model explores close mathematical expressions for Harmonic distortion, intermodulation distortion, and interception points and also depicted them in graphical form. The second and third order harmonics and intermodulation distortions are analyzed with help of mathematical analysis of drain current equation formulated using Mckelvey’s flux theory (MFT). The presented expressions are validated through a nonlinear output characteristic curve (Drain current versus drain voltage) at channel lengths of 140, 240, 300, and 1000 nm. The nonlinearity effect and its impact on the radio frequency electronic application of the quasi-ballistic and ballistic approach GFETs is one of the important prospects and is tabulated in Table 1 for more clarity with the particular models and respective frequencies.

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“…However, native graphene has a zero bandgap and it is not suitable as a transistor channel for digital applications . Several methods have been proposed for opening a bandgap in graphene for increasing the transistor switching ratio such as imposing lateral quantum confinement by using graphene nanoribbon (GNR), applying an electrical field across bilayer graphene, using quantum dots, or chemical derivates . These techniques are likely to entail a degradation of graphene mobility.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

Horri

Faez

Darvish

2017

Physica Status Solidi (a)

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In this paper, the electrical characteristics of vertical tunneling bilayer graphene field effect transistor (VTBGFET) are theoretically investigated. We evaluate the device behavior using nonequilibrium Green's function (NEGF) formalism combined with an atomistic tight binding model. By using this method, we extract the most significant figures of merit such as ON/OFF current ratio, subthreshold swing, and intrinsic gate-delay time.The results indicate that using a bilayer graphene instead of a monolayer graphene as the base material for the source and drain regions leads to a larger ON/OFF current ratio due to the presence of an energy bandgap in biased bilayer graphene. Also, the subthreshold swing of VTBGFET can be much lower than that of vertical tunneling monolayer graphene field-effect transistor (VTMGFET). We find that the increase of the number of hBN layers enhances the ON/OFF current ratio but degrades the intrinsic gate-delay time.

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An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

Cited by 23 publications

References 35 publications

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

Nonlinearity, Scaling Trends of Quasi-Ballistic Graphene Field Effect Transistors Targeting RF Applications

Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

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