In this paper, the electrical characteristics of tunneling transistors based on vertical graphene and a hexagonal boron-carbon-nitrogen (hBCN) heterostructure are studied and compared theoretically. We have considered three different types of hBCN, i.e., BC2N, BC2N′, and BC6N as a tunneling barrier. Our simulation is based on the nonequilibrium Green’s function formalism along with an atomistic tight-binding (TB) model. The TB parameters are obtained by fitting the band structure to first-principles results. By using this method, electrical characteristics of the device, such as the ION/IOFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. For a fair comparison, the effects of geometrical variations and number of tunneling barrier layers on the electrical parameters of the device are simulated and investigated. We show that, by an appropriate design, the device can be used for low-power or high-performance applications. The device allows current modulation exceeding 106 at room temperature for a 0.6 V bias voltage.
Metal-oxide-semiconductor field-effect transistors (MOSFETs) are mostly used in the design of static cells. MOSFETs have disadvantages, such as increased leakage current, reduced reliability, increased short-channel effects, and large changes in parameters. In this paper, fin field-effect transistors (FinFETs) are used instead of MOSFETs. Memristive elements are used in the design of a nonvolatile static cell. The memory cell presented here includes a static random access memory (SRAM) core (a 6T FinFET cell in this case) with two memristors and two memcapacitors, thus making a 6T FinFET SRAM cell-based 2R2C. The designed nonvolatile memory cell performed better in terms of power consumption, energy, areal factors, static noise margin, write margin, and read/write propagation delay than other designs presented so far. The figures of merit of the proposed design are also substantially improved, making the presented scheme a better approach for 'read-write' operations. In this paper, we have tried to keep the load capacitance (C load ) as small as possible to improve the power consumption and the write and read delays, because the capacitor charge has a direct relationship with the cell's power consumption.
In this paper, the absorption of CO and CO 2 molecules on the two-dimensional structure of borophene has been investigated. Theoretical calculations based on density functional theory shows that the absorption energy of CO and CO 2 molecules on borophene are much higher than that of graphene. Also, by lithium decorated borophene, the absorption energy is increased. So, it can be used as a toxic sensor of CO and CO 2 gases. The monolayer borophene and borophene decorated with lithium is still conductive after absorption of CO and CO 2 molecules. Furthermore, the I-V characteristics based on the non-equilibrium Green's function calculations shows that currently, the limited effect occurs beyond 1.4 V and 2 V for the absorption of CO and CO 2 molecules, respectively. Based on our findings, pure borophene can be used as the detector of CO and CO 2 gas molecules, and decorated borophene with lithium can be used as an absorbent of these toxic gases from the environment.
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