An 88.5–110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications

Feng, Guangyin; Boon, Chirn Chye; Meng, Fanman; Yi, Xiang; Li, Chenyang

doi:10.1109/lmwc.2016.2517071

Cited by 69 publications

(16 citation statements)

References 11 publications

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“…CMOS technology, traditionally used in digital and low-frequency analog circuits, has been quite capable of competing with the BiCMOS technology, at least up to millimeter-wave frequencies [70], and may be found suitable for THz applications in the near future. CMOS is favored owing to the low cost of fabrication and high level of achievable integration.…”

Section: Emerging Transistor Technologies Capable Of Operating In mentioning

confidence: 99%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

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Section: Emerging Transistor Technologies Capable Of Operating In mentioning

confidence: 99%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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“…Lumped elements [88][89][90][91] occupy less chip areas, but simulation of lumped elements needs very detailed knowledge of the substrate and the cost is relatively higher. Next, transmission lines [92,93] have well-defined EM simulation environment, but they usually occupy comparatively larger chip areas. Microstrip lines are commonly used [94][95][96][97][98][99][100][101][102][103][104].…”

Section: Comparison and Summarymentioning

confidence: 99%

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

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This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.

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“…In this case, common source (CS) structure and cascode structure are two widely adopted topologies for CMOS LNAs. To achieve higher gain, multistages topology is usually employed . However, this leads to larger silicon area utilization and higher noise figure especially when cascode structure is utilized.…”

Section: Introductionmentioning

confidence: 99%

“…To achieve higher gain, multistages topology is usually employed. [4][5][6][7][8][9] However, this leads to larger silicon area utilization and higher noise figure especially when cascode structure is utilized. This is because the parasitic capacitance of common gate (CG) transistor introduces considerable noise at the output port.…”

Section: Introductionmentioning

confidence: 99%

A 28 GHz LNA using defected ground structure for 5G application

Luo

Wang

et al. 2018

Micro & Optical Tech Letters

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In this article, a defected ground structure (DGS) is proposed to replace the inductor placed between common source and common gate stage in cascode low‐noise amplifier (LNA), leading to silicon area reducing as well as good internal matching condition. For verification, a 28 GHz three‐stage cascode LNA with DGS is designed and implemented in a 130‐nm CMOS technology. The fabricated prototype achieves a peak gain of 20 dB and minimum noise figure of 5.2 dB. The LNA occupies small silicon area of only 0.12 mm2 excluding testing pads, and it draws a current of 16 mA from a 1.5 V supply voltage.

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An 88.5–110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications

Cited by 69 publications

References 11 publications

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

A 28 GHz LNA using defected ground structure for 5G application

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