An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

Cai, Di; Chen, Houpeng; Wang, Qian; Chen, Yifeng; Zhang, Song; Wu, Guangping; Feng, Songlin

doi:10.1109/led.2012.2204952

Cited by 23 publications

(16 citation statements)

References 12 publications

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“…The black regions above and below the SLL are the TiW electrodes. Diffusion length calculations based on reported endurance switching of PCRAM devices 5,19,20 indicate that Ge, Sb, and Te elements require $1.26 Â 10 4 cycles before significant intermixing of atoms between the layers and this is consistent with our TEM image. It is interesting to note that diffusion constants of GST derived from molecular simulations 21 range from 3.78 Â 10 À5 to 4.67 Â 10 À5 cm 2 /s and this may result in a diffusion length of $20 nm after a 20 ns pulse.…”

supporting

confidence: 86%

“…It is interesting to note that diffusion constants of GST derived from molecular simulations 21 range from 3.78 Â 10 À5 to 4.67 Â 10 À5 cm 2 /s and this may result in a diffusion length of $20 nm after a 20 ns pulse. The large diffusion lengths might not allow GeSbTe based devices to switch 10 9 to 10 11 times, and so the diffusion constants were estimated from actual endurance data 5,19,20 ($10 À15 cm 2 /s). The reason for the large difference in magnitude may be due to the different conditions considered in the two cases.…”

mentioning

confidence: 99%

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Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

Tan

Shi

Zhao

et al. 2013

Applied Physics Letters

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A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated ∼37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of ∼108 compared to ∼106 for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements.

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supporting

confidence: 86%

mentioning

confidence: 99%

Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

Tan

Shi

Zhao

et al. 2013

Applied Physics Letters

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“…Compared with the one-bipolar-junction-transistor-andone-resistor (1B1R) [15] and one-diode-and-one-resistor (1D1R) [16,17] structured memory cell, the one-transistorand-one resistor (1T1R) [18][19][20] memory cell is the simplest and the best compatible in process, in which only additional 2-3 masks accomplishing the chip integration though the cell size of 1T1R structure is larger than that of the 1B1R and 1D1R structures. In our previous work, an 8-Mb PCRAM experimental chip has been fabricated in a 130-nm 4-metal level standard CMOS technology [18].…”

Section: Introductionmentioning

confidence: 99%

“…In our previous work, an 8-Mb PCRAM experimental chip has been fabricated in a 130-nm 4-metal level standard CMOS technology [18]. However, the larger operation current and smaller RESET/ SET resistance ratio are still the crucial issues for PCRAM chip.…”

Section: Introductionmentioning

confidence: 99%

A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

et al. 2015

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In this letter, a phase change random access memory (PCRAM) chip based on Ti 0.4 Sb 2 Te 3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor (CMOS) technology. The phase change resistor was then integrated after CMOS logic fabrication. The PCRAM was successfully embedded without changing any logic device and process, in which 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 mA, 100 and 10 ns, respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications.

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“…Different memory types [5]- [9] in terms of energy per cell, speed of operation, cell size, data endurance, and data retention are shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Straintronics-Based Random Access Memory as Universal Data Storage Devices

Barangi

Mazumder

2015

IEEE Trans. Magn.

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Nanomagnetic and spin-based memories are distinguished for their high data endurance in comparison with their charge-based peers. However, they have drawbacks, such as high write energy and poor scalability due to high write current. In this paper, we apply the straintronics principle that seeks the combination of piezoelectricity and inverse magnetostriction (Villari effect), to design a proof-of-principle 2 Kb nonvolatile magnetic memory in 65 nm CMOS technology. Our simulation results show read-access and write-cycle energies as low as 49 and 143 fJ/b, respectively. At a nominal supply level of 1 V, reading can be performed as fast as 562 MHz. Write error rates <10 −7 and 10 −15 can be obtained at 10 and 5 MHz, respectively. In addition to nonvolatility, ultralow energy per operation, and high performance, our STRs memory has a high storage density with a cell size as small as 0.2 µm 2 .

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An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

Cited by 23 publications

References 12 publications

Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

Straintronics-Based Random Access Memory as Universal Data Storage Devices

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