Amorphous Silicon Thin-Film Transistors with SiO_xN_y/SiN_x Gate Insulators

Abstract

A double layer of plasma chemical vapor deposition SiO x N y and SiN x was applied to the gate insulator of an amorphous silicon (a-Si) thin-film transistor (TFT). When a thin SiN x layer is inserted between the a-Si of an a-Si TFT and the SiO x N y gate insulator, the density of trapped charges is found to decrease less than for a gate insulator with only SiN x , when the thickness of SiN x is decreased. No deterioration was observed in the switching characteristics of an a-Si TFT with a SiO x N y /SiN x gate insulator, compared with a-Si TFTs with SiN x gate insulators commonly used in liquid crystal displays. The density of trapped charges is related to the threshold voltage shift.

Synthesis of a Novel Polyethoxysilsesquiazane and Thermal Conversion into Ternary Silicon Oxynitride Ceramics with Enhanced Thermal Stability

“…On the other hand, nonstoichiometric silicon oxynitride (SiO x N y ) films can be fabricated by plasma enhanced chemical vapour deposition (PECVD) [12,13,14,15,16,17,18,19]. In addition to better dielectric properties, SiO x N y films show excellent optical properties.…”

“…The optical losses in SiO x N y films are significantly low, and the refractive index of the films can be controlled in the wide range from 1.45 for SiO 2 to 2.0 for Si 3 N 4 [12], which can offer potential applications, such as antireflective coatings [13] and waveguide layers [14,15,16]. Moreover, SiO x N y films exhibit sufficient thermal and chemical stabilities, and can thus be expected to be used for electronic devices [13,17] and buffer layers [18,19]. …”

SIMS analytical technique for N profile in SiON/SiN/Si

“…SIMS spectra were measured by raster size over the 250 × 250 µm and Ф 60 µm analysis area. The samples were prepared with nitrogen (N)‐implanted Si single crystal, SiN/Si, and SiON/SiN/Si thin films. Each different kind of SIMS mass analyzers has a range of possible mass resolutions in the range m / ∆m 500 to 10,000.…”

Estudo e produção de filmes de oxinitreto de silício (SiOxNy) pela técnica de PECVD.

“…Uma das primeiras observações da formação do oxintreto de silício (SiO x N y ) [1] ocorreu durante o processamento de substratos de silício com a técnica de oxidação local conhecida como LOCOS onde foi detectada sua característica de resistência à oxidação. Posteriormente esse material foi utilizado em dispositivos TFTs (Thin Film Transistors) por apresentar menor tensão mecânica e menor densidade de cargas armadilhadas na interface em comparação com o Si 3 N 4 [2,3] . Os…”

“…do oxigênio e nitrogênio foi variada em quatro sub faixas: de 390 a 420 eV, de 420 a 520 eV, de 520 a 550 eV e de 550 a 600 eV com passo de 0,3 eV, 1 eV, 0,3 eV e 1 eV respectivamente. Foram utilizados substratos de silício cristalino tipo (100) e espessuras do filme de ~1000Å.…”