SIMS analytical technique for N profile in SiON/SiN/Si

Abstract

The mass analysis of secondary ions is based on the phenomenon that secondary ions are ejected from the surface when primary ions bombard the target. It is well known that nitrogen has a very high ionization potential and zero electron affinity. As a result, both secondary positive and negative ion yields of nitrogen atomic ions are poor or absent. In this work, we report N profile easurements in SiON/SiN/Si using an O2+ primary beam while monitoring N+ and N2++ atomic ions. We chose a mass resolution of 1000 and found that 14N is very good candidate in several multilayer. Copyright © 2012 John Wiley & Sons, Ltd.