Aluminum-Germanium eutectic bonding for 3D integration

Crnogorac, F.; Birringer, Ryan P.; Dauskardt, Reinhold H.; Pease, Fabian

doi:10.1109/3dic.2009.5306531

Cited by 13 publications

(10 citation statements)

References 16 publications

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“…The Al 0.72 Ge 0.28 eutectic bonding approach has been demonstrated for 3D ICs [71], LEDs [72], passive test vehicles [73,74,75,76,77,78,79,80], and smart gyroscopes [5,81,82]. Similar to the Au-Si approach, this sealing method relies on solid-state diffusion to form the eutectic solution.…”

Section: Bonding Approachesmentioning

confidence: 99%

Wafer-Level Vacuum Packaging of Smart Sensors

Hilton

Temple

2016

Sensors

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The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

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Section: Bonding Approachesmentioning

confidence: 99%

Wafer-Level Vacuum Packaging of Smart Sensors

Hilton

Temple

2016

Sensors

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“…Due to the fact the most used eutectic bonding layers contain metals which are not compatible with CMOS technology here can be mentioned only Al:Ge (Crnogorac et al 2009). This type of eutectic gives the advantage of full CMOS-compatibility and can be used for vacuum applications (e.g.…”

Section: Eutectic and Tlp Wafer Bondingmentioning

confidence: 99%

CMOS: compatible wafer bonding for MEMS and wafer-level 3D integration

Dragoi

Pabo²,

Burggraf

et al. 2012

Microsyst Technol

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Wafer bonding became during past decade an important technology for MEMS manufacturing and waferlevel 3D integration applications. The increased complexity of the MEMS devices brings new challenges to the processing techniques. In MEMS manufacturing wafer bonding can be used for integration of the electronic components (e.g. CMOS circuitries) with the mechanical (e.g. resonators) or optical components (e.g. waveguides, mirrors) in a single, wafer-level process step. However, wafer bonding with CMOS wafers brings additional challenges due to very strict requirements in terms of process temperature and contamination. These challenges were identified and wafer bonding process solutions will be presented illustrated with examples.

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“…Most Ru contact studies test unpackaged devices [10], [11], [12]. MEMS device bonding with Al-Ge [13], [14], [15], Au-Sn [16], [17], In-Ga [18] polymer adhesive [7], glass frit and anodic bonding has been reported, but to the best of our knowledge there is a research gap with regard to Ru compatibility with a bonding process. This paper explores the compatibility of Ru in contact with Al-Ge eutectic alloy in the context of a MEMS WLP process.…”

Section: Introductionmentioning

confidence: 99%

“…Concerns about Ru compatibility with Al-Ge bonding are primarily inspired by the case of Si and the need for Si diffusion barriers reported in literature [13], [14], [15]. Si diffusion can introduce melt failure in Al-Ge by the creation of an Al-Ge-Si ternary alloy with an elevated melting temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Si diffusion can introduce melt failure in Al-Ge by the creation of an Al-Ge-Si ternary alloy with an elevated melting temperature. This can be read directly from the Al-Ge-Si phase diagram [19], [20], [21], which bears a eutectic line between the binary eutectic points of Al-Ge at 424°C [13] and Al-Si at ~580°C. Bonding at temperatures too close to the pure Al-Ge eutectic value will therefore be at risk of not melting the layers.…”

Section: Introductionmentioning

confidence: 99%

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Exploring Ru Compatibility With Al-Ge Eutectic Wafer Bonding

Ferguson

Najah

Banville

et al. 2022

J. Microelectromech. Syst.

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We explore compatibility of Ru with Al-Ge eutectic wafer bonding. We first present experiments to check for the presence of Ru ternary alloy poisoning inhibiting Al-Ge melting as well as evaluations of Al-Ge melt wettability on Ru and diffusion outcomes following bond-simulating anneals. Results show that Ru is stable with no observed microstructural changes or dissolution in the melt, indicating no ternary poisoning for the applied thermal budget. Ru was found to act as an effective barrier offering good melt wettability in all considered configurations with Al and Ge. From inspection of the binary constituents of Al-Ge-Ru we propose that Al-Ge eutectic melting temperature will decrease marginally for Ru contamination in a 1-2% range before a drastic increase in melting temperature (>10°C/% Ru) at higher Ru compositions. We then demonstrate wafer-level packaged 200 mm devices and MEMS with strong bond outcomes of devices bearing Ru contacts. We conclude that Ru has high compatibility with Al-Ge eutectic bonding.

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Aluminum-Germanium eutectic bonding for 3D integration

Cited by 13 publications

References 16 publications

Wafer-Level Vacuum Packaging of Smart Sensors

Wafer-Level Vacuum Packaging of Smart Sensors

CMOS: compatible wafer bonding for MEMS and wafer-level 3D integration

Exploring Ru Compatibility With Al-Ge Eutectic Wafer Bonding

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