1999
DOI: 10.1016/s0022-3093(99)00079-4
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Aluminium doped zinc oxide films: formation process and optical properties

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Cited by 19 publications
(5 citation statements)
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“…(3) [28,29] and Kubelka-Munk function F(R) is directly proportional to the absorbance. Therefore, F(R) values were converted to the linear absorption coefficient by means of˛= F(R)/t = Absorbance/t relation [30]; where t is the thickness of the ZnO film. The curve of (F(R)h /t) 2 vs. h for the ZnO film was plotted, as shown in Fig.…”
Section: Determination Of Optical Band Gap Of the Zno Filmmentioning
confidence: 99%
“…(3) [28,29] and Kubelka-Munk function F(R) is directly proportional to the absorbance. Therefore, F(R) values were converted to the linear absorption coefficient by means of˛= F(R)/t = Absorbance/t relation [30]; where t is the thickness of the ZnO film. The curve of (F(R)h /t) 2 vs. h for the ZnO film was plotted, as shown in Fig.…”
Section: Determination Of Optical Band Gap Of the Zno Filmmentioning
confidence: 99%
“…Sol-gel process is getting much attention because of its simplicity and low cost. This process is capable of producing high-quality coatings even on both large-and small-sized substrates which can be employed for advanced applications (Silva and Darbello Zaniquelli 1999;Lee and Park 2003;Ng et al 2012).…”
Section: Introductionmentioning
confidence: 99%
“…After the deposition process, furnace atmosphere, drying and annealing time are important factors (Silva and Darbello Zaniquelli 1999).…”
Section: Introductionmentioning
confidence: 99%
“…At present, as good alternatives to ITO, many research groups have studied ZnO based materials such as Al doped ZnO (AZO) which are non-toxic, inexpensive source materials and abundant for thin-film transparent electrode applications [17,18]. In addition, when impurity elements of group III in the periodic table (B, Al, Ga, and In), especially Al, are incorporated, ZnO becomes an n-type material with the improvement of electrical [19] and optical properties because of the increase in the carrier concentration and mobility.…”
Section: Introductionmentioning
confidence: 99%