Electrical characterization and device characterization of ZnO microring shaped films by sol–gel method

Yakuphanoğlu, F.

doi:10.1016/j.jallcom.2010.07.151

Cited by 171 publications

(53 citation statements)

References 41 publications

(54 reference statements)

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“…44 The donor density of n-ZnO obtained in our work is comparable with that reported for n-ZnO films grown on p-Si films by magnetron sputtering at different substrate temperatures, which was found to vary from 8.62 9 10 16 cc À1 to 1.03 9 10 19 cc À1 . 41 Thus, the observed results are quite consistent with reported values.…”

Section: Capacitance-voltage Characteristicssupporting

confidence: 88%

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

Kumar

Chand

2014

Journal of Elec Materi

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For heterojunction fabrication, zinc oxide thin films were grown on p-Si by pulsed laser deposition. X-ray diffraction patterns were used to study the grain size and morphology of the films. The optical properties of the films were studied by UV-visible and photoluminescence spectroscopy. Experimental observations confirmed that the deposited films have potential for sharp emission in the visible region. High-purity (99.999%) vacuum evaporated aluminium metal was used to make contacts to the n-ZnO and p-Si. The current-voltage characteristics of the Al/n-ZnO/p-Si(100)/Al heterostructure measured over the temperature range 60-300 K were studied on the basis of the thermionic emission diffusion mechanism. The equivalent Schottky barrier height and the diode ideality factor were determined by fitting measured current-voltage data to the thermionic emission diffusion equation. It was observed that the barrier height decreased and the ideality factor increased with decreasing temperature, and that the activation energy plot was nonlinear at low temperature. These characteristics are attributed to the Gaussian distribution of barrier heights. The capacitance-voltage characteristics of the Al/n-ZnO/p-Si(100)/Al heterostructure diode were studied over a wide temperature range. The impurity concentration in deposited n-type ZnO films was estimated from measured capacitance-voltage data.

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Section: Capacitance-voltage Characteristicssupporting

confidence: 88%

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

Kumar

Chand

2014

Journal of Elec Materi

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“…This is reported to have a strong effect on the performance and conduction mechanisms of such diodes [21]. Clearly, all the devices exhibited typical rectifying behavior, confirming the Schottky nature of the junction between CuAl-Mn-Cr and p-Si, with an exponential increase in current in the forward bias and weak voltage dependence of current in reverse bias [22,23]. The rectification ratios (RR) were estimated from Fig.…”

Section: Thermal Analysis Of the Alloysmentioning

confidence: 61%

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

et al. 2016

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Cr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.

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“…The Kubelka-Munk function is directly proportional to the absorbance (α = F (R)/t, where t is the thickness of the film) [36]. Figure 3 shows the total reflectance spectra of the as-deposited and annealed ZnO thin films.…”

Section: Optical Results Of Films On Si Substratementioning

confidence: 99%

Annealing effects of ZnO thin films on p-Si(100) substrate deposited \newline by PFCVAD

Kara¹,

Tüzemen²,

Esen³

2014

Turk J Phys

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Abstract:In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic structure and the size of the crystallites in the films were studied by means of X-ray diffraction. The films had a weak peak (100) orientation at 2 θ =∼ 32• . X-ray diffraction analysis of the as-deposited ZnO and the film annealed at 850• C showed a strong ZnO (002) diffraction peak centered at 34.1 • and 34.5• , respectively. The (004) peak was seen for film annealed at 850 • C. ZnO film annealed at 850• C had higher grain size and better crystallinity.Optical properties of the ZnO films were studied using a UV-Vis-NIR spectrophotometer. The optical band gap of the films was determined using the reflectance spectra by means of the Kubelka-Munk formula. From the optical properties, the band gap energy estimated for films as-deposited and annealed at 850 • C was 3.00 and 3.28 eV, respectively. TheRaman scattering spectra of the films was observed at a laser power of 2 mW.

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Electrical characterization and device characterization of ZnO microring shaped films by sol–gel method

Cited by 171 publications

References 41 publications

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

Structural, Optical, and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterostructures

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

Annealing effects of ZnO thin films on p-Si(100) substrate deposited \newline by PFCVAD

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