Deposition of Al doped ZnO thin films on the different substrates with radio frequency magnetron sputtering

Elmas, Saliha; Korkmaz, Şadan

doi:10.1016/j.jnoncrysol.2012.09.024

Cited by 16 publications

(6 citation statements)

References 37 publications

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“…This context shows the need to change the approach regarding AZO deposition by magnetron plasma sputtering. While for many years, the research was following a race for low resistivity values, reported over very small areas on the substrate (mainly in regions of shadow with respect to the erosion track), the recent aim is process optimization, over the whole substrate area, most of the time including substrate rotation [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36]. However, such rotation averages the AZO properties and complicates the possibility to draw relevant conclusions about the growth mechanism.…”

Section: Introductionmentioning

confidence: 99%

Spatial distribution of plasma parameters by a dual thermal-electrostatic probe in RF and DC magnetron sputtering discharges during deposition of aluminum doped zinc oxide thin films

Petrea¹,

Stamate²

2021

Plasma Sources Sci. Technol.

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Aluminum doped zinc oxide thin films deposited by magnetron plasma sputtering are essential for various optoelectronic applications. So far, the oxygen negative ions and the atomic oxygen are regarded as responsible for the poor spatial uniformity of thin film resistivity. While various methods are available for thin film characterization, understanding the growth mechanism requires spatial-resolved measurements of plasma parameters. This work uses a dual thermal-electrostatic probe that is able to reveal the spatial distribution of plasma density, electron temperature and plasma potential. The results exhibit a parabolic profile for plasma density and flat profiles for electron temperature and plasma potential, with no correlation with the strong distribution of thin film resistivity that mirrors the erosion track on the target surface.

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Section: Introductionmentioning

confidence: 99%

Spatial distribution of plasma parameters by a dual thermal-electrostatic probe in RF and DC magnetron sputtering discharges during deposition of aluminum doped zinc oxide thin films

Petrea¹,

Stamate²

2021

Plasma Sources Sci. Technol.

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“…Additionally, ZnO is ideal for this study because as it is a closely stoichiometric material easily synthesized through a number of methods, indicating that the samples considered in published work should be relatively uniform in character, allowing us to address the Tauc method rather than bias arising from sample variability. Zinc oxide thin films can be fabricated using methods such as sol‐gel, chemical vapor deposition, hydrothermal, or solvothermal growth, magnetron sputtering, and pulsed laser deposition (PLD) . It is stable in a hexagonal wurtzite structure with lattice parameters of c = 5.205 Å, a = 3.249 Å .…”

Section: Introductionmentioning

confidence: 99%

Assessing Tauc Plot Slope Quantification: ZnO Thin Films as a Model System

Coulter

Birnie

2017

Physica Status Solidi (b)

208

107

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One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near‐edge region can be fitted to a simple expression where the intercept gives the band gap and the fitting exponent identifies the electronic transition as direct or indirect. [See Tauc et al., Physica Status Solidi 15, 627 (1966); naturally, these are usually called “Tauc” plots.] In earlier work, we found that direct band gaps fitted using Tauc's method can be quite accurate, to ∼1% [see Viezbicke et al., Phys. Status Solidi B 252, 1700 (2015)]. Still, slopes of these Tauc plots are less frequently quantified, even though the slopes are directly rooted in key band‐structure parameters. In this study, we examine the reproducibility of Tauc plot slopes for ZnO as a model direct‐gap material and compare these experimental values with the theoretically derived slope. In contrast to the band gap accuracy, the experimental slope values varied by several orders of magnitude. The histogram of slope values was significantly more compact for Tauc plots exhibiting less Urbach tail contribution. In these cases, the Tauc slopes can provide an order‐of‐magnitude quantification of other key band characteristics such as carrier effective mass.

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“…Numerous deposition methods are available for zinc oxide thin films including sol-gel [24][25][26][27][28][29], chemical vapor deposition [9,18,30,31], hydrothermal [32,33] or solvothermal growth [34], magnetron sputtering [35][36][37][38], and pulsed laser deposition (PLD) [39][40][41][42]. It is stable in a hexagonal wurtzite structure with lattice parameters of (c ¼ 5.205 Å, a ¼ 3.249 Å) [43].…”

mentioning

confidence: 99%

Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system

Viezbicke

Patel

Davis

et al. 2015

Phys. Status Solidi B

888

459

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One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near‐edge region can be fitted to a simple expression in which the intercept gives the band‐gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called “Tauc” plots). While the technique is powerful and simple, the accuracy of the fitted band‐gap result is seldom stated or known. We tackle this question by refitting a large number of Tauc plots from the literature and look for trends. Nominally pure zinc oxide (ZnO) was chosen as a material with limited intrinsic deviation from stoichiometry and which has been widely studied. Our examination of the band gap values and their distribution leads to a discussion of some experimental factors that can bias the data and lead to either smaller or larger apparent values than would be expected. Finally, an easily evaluated figure‐of‐merit is defined that may help guide more accurate Tauc fitting. For samples with relatively sharper Tauc plot shapes, the population yields Eg(ZnO) as 3.276 ± 0.033 eV, in good agreement with data for single crystalline material.

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Deposition of Al doped ZnO thin films on the different substrates with radio frequency magnetron sputtering

Cited by 16 publications

References 37 publications

Spatial distribution of plasma parameters by a dual thermal-electrostatic probe in RF and DC magnetron sputtering discharges during deposition of aluminum doped zinc oxide thin films

Spatial distribution of plasma parameters by a dual thermal-electrostatic probe in RF and DC magnetron sputtering discharges during deposition of aluminum doped zinc oxide thin films

Assessing Tauc Plot Slope Quantification: ZnO Thin Films as a Model System

Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system

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