Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization

Shahid, Muhammad Umair; Deen, Kashif Mairaj; Ahmad, Ayyaz; Akram, Mahreen; Aslam, Muhammad; Akhtar, Waseem

doi:10.1007/s13204-015-0425-7

Cited by 55 publications

(28 citation statements)

References 22 publications

(23 reference statements)

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“…Among the electrical properties, the resistivity depends strongly on the condensation of the charges caused by the degree of substitution of the cobalt atoms by the cadmium atoms, as well as by the oxygen vacancies present in the crystal. 39 The variation of the resistance and capacities as a function of Cd-doping level are recapitulated in Table 4 and exposed in Fig. 7.…”

Section: Impedance Spectroscopymentioning

confidence: 99%

CADMIUM-DOPED Co₃O₄ THIN FILMS: SYNTHESIS AND CHARACTERIZATION

et al. 2019

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This paper contains the results of the structural and spectroscopic characterizations of undoped and Cadmium-doped cobalt oxide thin films with different Co/Cd molar ratios (3%, 5%, 7% and 9%). The nanosized undoped and cadmium-doped Co3O4 thin layers were prepared using sol–gel process and deposited on glass substrates by dip coating. The changes caused by the incorporation of cadmium at different levels of doping have been highlighted by the techniques UV–Visible (UV–Vis) spectroscopy, Infrared (IR) spectroscopy, X-ray diffraction (XRD) measurements, SEM coupled EDX and impedance spectroscopy. From the UV–Vis spectroscopy analysis, it was found that all the films are two direct bandgap energies. The optical transmittance and the bandgap energy decrease with increase in Cd concentration. The XRD spectra confirm the films were polycrystalline with a cubic spinel structure. The results of the impedance spectroscopy show that the equivalent circuit of the synthesized samples is an RC parallel circuit.

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Section: Impedance Spectroscopymentioning

confidence: 99%

CADMIUM-DOPED Co₃O₄ THIN FILMS: SYNTHESIS AND CHARACTERIZATION

et al. 2019

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“…Tuzak seviyelerinin yakalama tesir kesiti =7.27x10 17 cm 2 olarak bulunmuştur. ZnO yapısına %2 Al katkılamanın yapının serbest elektron sayısını artırdığı ve direnci düşürdüğü bilinmektedir [21]. AZO/p-Si örneğinin DLTS sonuçlarından iletkenlik bandından 119 meV aşağıda elektron sevilerinin varlığı tespit edilmiştir.…”

Section: Materyal Ve Metotunclassified

Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

Akçay

2018

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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Özet: Bu çalışmada, p-tipi Silisyum (p-Si) üzerine katkısız Çinko Oksit (ZnO) ve %2 Alüminyum katkılı çinko oksit (AZO) kaplanarak oluşturulan heteroeklemlerin elektriksel özellikleri incelenmiştir. ZnO ve AZO nanoparçacıklar Sol-Jel yöntemi ile sentezlenmiş ve ZnO/p-Si, AZO/p-Si heteroeklemleri döndürme kaplama tekniği ile oluşturulmuştur. Kaplama sonrası örneklere 450 o C'de 30 dk termal tavlama işlemi uygulanmıştır. 10K-300K aralığında alınan Akım-Voltaj (I-V) ve Kapasitans-Voltaj (C-V) ölçümleri örneklerin çok düşük sızıntı akımına sahip diyot davranışı sergilediğini göstermektedir. C-V ölçüm sonuçlarından diyotların kontak potansiyeli (built-in potential, Vbi) ve taşıyıcı konsantrasyonları (Nd) hesaplandı. Derin seviye geçiş spektroskopisi (DLTS) tekniği ile arınma bölgesi civarında bulunan tuzak seviyeleri araştırılmıştır. Her iki örnekte de elektron tuzaklarının varlığı tespit edilmiştir.Abstract: In this work, the electrical properties of heterojunctions formed by coating of undoped Zinc Oxide (ZnO) and 2% Aluminum doped zinc oxid (AZO) on p-type silicon (p-Si) were investigated. ZnO and AZO nanoparticles were synthesized by Sol-Gel method and ZnO / p-Si, ZnO (Al) / p-Si heterojunctions were formed by spin coating technique. After the coating, the samples were thermally annealed at 450 o C for 30 minutes. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements taken at 10K-300K show that the samples exhibit diode behavior with very low leakage current. Built-in potential (Vbi) and carrier concentrations (Nd) of diodes were calculated from C-V measurement results. Deep level transition spectroscopy (DLTS) technique was used to investigate trap levels around the depletion region. The presence of electron traps in both samples was determined.

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“…An Nb film of 16 nm thickness is deposited on an S i 0 2 substrate for obtaining the desired arrays of antidots. The micro bridges and nanostructured array of antidots are, respectively, fabricated by photo-and e-beam lithography techniques on a resistive layer of polymethyl metacrystalline (Mostako and Alika 2012;Shahid et al 2016). Fabrication of the microbridges and array is followed by scanning of the samples to the desired antidots using scanning electron microscopy (SEM).…”

Section: Physical Measurement System and Readingsmentioning

confidence: 99%

Modeling electrical properties for various geometries of antidots on a superconducting film

et al. 2017

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Electrical properties, specifically critical current density, of a superconducting film carry a substantial importance in superconductivity. In this work, we measure and study the current-voltage curves for a superconducting Nb film with various geometries of antidots to tune the critical current. We carry out the measurements on a commercially available physical property measurement system to obtain these so-called transport measurements. We show that each of the used geometries exhibits a vastly different critical current, due to which repeatedly performing the measurements independently for each geometry becomes indispensable. To circumvent this monotonous measurement procedure, we also propose a framework based on artificial neural networks to predict the curves for different geometries using a small subset of measurements, and facilitate extrapolation of these curves over a wide range of parameters including temperature and magnetic field. The predicted curves are then crosschecked using the physical measurements; our results suggest a negligible mean-squared error-in the order of 10 À9 .

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Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization

Cited by 55 publications

References 22 publications

CADMIUM-DOPED Co₃O₄ THIN FILMS: SYNTHESIS AND CHARACTERIZATION

CADMIUM-DOPED Co₃O₄ THIN FILMS: SYNTHESIS AND CHARACTERIZATION

Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

Modeling electrical properties for various geometries of antidots on a superconducting film

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Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization

Cited by 55 publications

References 22 publications

CADMIUM-DOPED Co3O4 THIN FILMS: SYNTHESIS AND CHARACTERIZATION

CADMIUM-DOPED Co3O4 THIN FILMS: SYNTHESIS AND CHARACTERIZATION

Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

Modeling electrical properties for various geometries of antidots on a superconducting film

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Product

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CADMIUM-DOPED Co₃O₄ THIN FILMS: SYNTHESIS AND CHARACTERIZATION

CADMIUM-DOPED Co₃O₄ THIN FILMS: SYNTHESIS AND CHARACTERIZATION