AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Tzou, An Jye; Chu, Kuo-Hsiung; Lin, I‐Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiaopeng; Wu, Bi; Shen, Chang‐Hong; Shieh, Jiann; Yeh, Wen–Kuan; Chang, Chun‐Yen; Kuo, Hao‐Chung

doi:10.1186/s11671-017-2082-0

Cited by 26 publications

(14 citation statements)

References 19 publications

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“…It is suspected that the higher R.I. at 175 °C can be attributed by hydrogen species inside the film. Due to the relatively low temperature, the remaining N–H bonds from N 2 H 4 are dominant after ligand exchange with TMA, resulting in the lower GPC results [ 31 ]. The R.I. of AlN film deposited at 350 °C is 1.98, which is close to the reported values of high-quality AlN films [ 32 , 33 , 34 ].…”

Section: Resultsmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

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Section: Resultsmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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“…To reduce the interface trap density for further improving the device performances, a thin insulator with a high dielectric constant and a large bandgap was deposited by atomic layer deposition (ALD) technology [105][106][107][108][109]. Several ALD materials such as Al 2 O 3 , AlN, and ZrO 2 have also exhibited the ability to improve the properties of power electronic components significantly [110][111][112]. However, although many efforts have been made to reduce these defects, they still exist and greatly affect the carrier lifetime.…”

Section: Sic Critical Stepmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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“…Second, AlN is an attractive passivation layer for GaN since a high quality GaN/AlN interface can be formed. − When this passivation layer precedes the dielectric gate deposition, both the AlN film quality and the AlN/GaN interface affect the characteristics of High Electron Mobility transistors (HEMTs) such as the electron mobility, charge trapping hysteresis, long-term reliability, and the threshold voltage. These ongoing issues represent a significant hurdle to overcome for the manufacturing of normally off HEMTs .…”

Section: Introductionmentioning

confidence: 99%

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Legallais

Mehdi

David

et al. 2020

ACS Appl. Mater. Interfaces

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In recent years, plasma enhanced atomic layer deposition (PEALD) has emerged as a key method for the growth of conformal and homogeneous aluminum nitride (AlN) films at the nanoscale. In this work, the utilized PEALD reactor was equipped not only with a traditional remote Inductively Coupled Plasma source but also with an innovative additional power supply connected to the substrate holder. Thus, we investigate here the substrate biasing effect on AlN film quality deposited on (100) silicon. We report that by adjusting the ion energy via substrate biasing, the AlN film quality can be significantly improved. Indeed, compared to films commonly deposited without bias, AlN deposited with a platen power of 5 W displays a 14% increase in the number of N−Al bonds according to X-ray spectroscopy analysis. Moreover, after having integrated them into Metal−AlN−Si capacitors, the 5 W AlN film exhibits a permittivity increase from 4.5 to 7.0 along with a drastic drop of leakage current density of more than 5 orders of magnitude. The use of substrate biasing during PEALD is thereby a promising strategy for the improvement of AlN film quality.

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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Cited by 26 publications

References 19 publications

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Review of Silicon Carbide Processing for Power MOSFET

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

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