Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Legallais, Maxime; Mehdi, H.; David, S.; Bassani, F.; Labau, S.; Pelissier, B.; Baron, T.; Martínez, E.; Ghibaudo, G.; Salem, B.

doi:10.1021/acsami.0c10515

Cited by 25 publications

(25 citation statements)

References 53 publications

(104 reference statements)

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“…This may arise from film crystallinity degradation due to ion bombardment. At bias greater than 10 W, the peak intensities drop significantly suggesting film amorphization, as observed previously on Si [27] This film degradation at high bias correlates well with the previous XPS analysis.…”

Section: Crystallographic Structuresupporting

confidence: 90%

“…The resulting GPC is about 0.5 Å per cycle, which is close to our previous GPC values reported for AlN grown on Si. [ 27 ]…”

Section: Resultsmentioning

confidence: 99%

“…AlN growth conditions are described elsewhere. [27] The Al and N precursors were trimethylaluminum from PURATREM (TMA, 99.99%) and a N 2 -H 2 gas mixture with 33% H 2 (ALPHAGAZ, 99.9999%), respectively. One cycle of AlN consisted of six main steps: (a) TMA injection (0.050 s), (b) Ar purge (3 s), (c) N 2 -H 2 stabilization (1.5 s), www.advmatinterfaces.de (d) N 2 -H 2 plasma (15 s), and (e) Ar purge (3 s).…”

Section: Methodsmentioning

confidence: 99%

“…But different phenomena are competing during substrate biasing: the energy contribution, the variation of the stoichiometry, the change in the strain level, and the texture of both the substrate and the deposited film. [27,35,36] Each has a particular impact on the growth of the deposited film. For example, the growth mode can be drastically different according to the energy provided.…”

Section: Tem Observationsmentioning

confidence: 99%

“…We recently reported the effect of substrate biasing during AlN growth by PEALD on Si(100). [ 27 ] We showed that by adjusting the ion energy via low substrate biasing, it is possible to significantly enhance the AlN film quality such as the number of N–Al bonds, the permittivity, and the leakage current, as well as the quality of the AlN/Si interface. However, if the bias is too high, this results in high ion energy which induces film degradation due to ion bombardment.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors

Legallais

Lefèvre

Martin

et al. 2021

Adv Materials Inter

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In this article, the role of the substrate biasing during the passivation of GaN with AlN deposited by plasma enhanced atomic layer deposition (PEALD) is investigated. In addition to a commonly used remote inductively‐coupled plasma source, the PEALD reactor is equipped with another power supply allowing the substrate to be biased and to adjust the ion energy impinging on the substrate surface. The presence is reported of a narrow bias window where the GaN passivation is significantly improved compared to a standard AlN film deposited without bias. It is found that the AlN film quality is enhanced and the crystallographic structure changes from a well‐ordered epitaxial relationship with the GaN substrate to textured films when applying a bias. Finally, the capacitance–voltage characteristics (C–V) of Al2O3/n‐GaN and Al2O3/AlN/n‐GaN metal‐oxide‐semiconductor (MOS) capacitors are also studied. It is shown that the addition of an AlN interlayer deposited with the appropriate bias is essential to positively shift the flatband voltage of the C–V characteristics while preserving high AlN/n‐GaN interface quality. Therefore, the GaN passivation with AlN deposited using substrate biasing provides a promising pathway towards the manufacturing of normally‐off MOS‐channel high electron mobility transistors.

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Section: Crystallographic Structuresupporting

confidence: 90%

“…The resulting GPC is about 0.5 Å per cycle, which is close to our previous GPC values reported for AlN grown on Si. [ 27 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Tem Observationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors

Legallais

Lefèvre

Martin

et al. 2021

Adv Materials Inter

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Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Rocha,

Zeghouane,

Boubenia

et al. 2023

Adv Elect Materials

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Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band voltage (VFB) and its hysteresis with increasing nitrogen concentration is reported. The increase in VFB is associated with the nitrogen content whereas the increase in hysteresis to the presence of impurities (hydroxyl groups and carbon‐related impurities). Alongside the nitrogen concentration, the impact of different post‐deposition annealing (PDA) temperatures is studied (400–800 °C). Stable AlON layers and interfaces with etched GaN substrates are reported with slight gallium oxide growth or gallium diffusion towards the dielectric layer. Finally, with increasing PDA temperature, an increase in VFB and a significant reduction of both VFB hysteresis and interface state density (Dit) are observed, notably at the measuring temperature of 150 °C. These results present a promising pathway toward more reliable and stable normally‐OFF GaN‐based MOS‐channel high electron mobility transistors (MOSc‐HEMTs).

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Significantly Improved High‐Temperature Energy Storage Performance of BOPP Films by Coating Nanoscale Inorganic Layer

Zhang

Young

et al. 2022

Energy & Environ Materials

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Biaxially oriented polypropylene (BOPP) is one of the most commonly used commercial capacitor films, but its upper operating temperature is below 105 °C due to the sharply increased electrical conduction loss at high temperature. In this study, growing an inorganic nanoscale coating layer onto the BOPP film's surface is proposed to suppress electrical conduction loss at high temperature, as well as increase its upper operating temperature. Four kinds of inorganic coating layers that have different energy band structure and dielectric property are grown onto the both surface of BOPP films, respectively. The effect of inorganic coating layer on the high‐temperature energy storage performance has been systematically investigated. The favorable coating layer materials and appropriate thickness enable the BOPP films to have a significant improvement in high‐temperature energy storage performance. Specifically, when the aluminum nitride (AlN) acts as a coating layer, the AlN‐BOPP‐AlN sandwich‐structured films possess a discharged energy density of 1.5 J cm−3 with an efficiency of 90% at 125 °C, accompanying an outstandingly cyclic property. Both the discharged energy density and operation temperature are significantly enhanced, indicating that this efficient and facile method provides an important reference to improve the high‐temperature energy storage performance of polymer‐based dielectric films.

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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Cited by 25 publications

References 53 publications

Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors

Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Significantly Improved High‐Temperature Energy Storage Performance of BOPP Films by Coating Nanoscale Inorganic Layer

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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Cited by 25 publications

References 53 publications

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Significantly Improved High‐Temperature Energy Storage Performance of BOPP Films by Coating Nanoscale Inorganic Layer

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Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors

Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors