Review of Silicon Carbide Processing for Power MOSFET

Langpoklakpam, Catherine; Liu, An-Chen; Chu, Kuo-Hsiung; Hsu, Lewis; Lee, Wen‐Chung; Chen, Shih-Chen; Sun, Chia‐Wei; Shih, Min‐Hsiung; Lee, Kung‐Yen; Kuo, Hao‐Chung

doi:10.3390/cryst12020245

Cited by 76 publications

(42 citation statements)

References 205 publications

(205 reference statements)

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“…The smallest band gap is characteristic of films close in composition to SiC. The optical band gap of SiC is reported to lie in the range of 2.3 to 3.3 eV for the most common polytypes of SiC such as 6H-SiC, 4H-SIC, and 3C-SiC [ 61 ]. The experimental band gap of the stoichiometric Si 3 N 4 films is reported to be about 3.3 eV [ 62 ].…”

Section: Resultsmentioning

confidence: 99%

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

et al. 2023

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Silicon carbonitride films were deposited on Si (100), Ge (111), and fused silica substrates through the reactive magnetron sputtering of a SiC target in an argon-nitrogen mixture. The deposition was carried out at room temperature and 300 °C and at an RF target power of 50–150 W. An increase in the nitrogen flow rate leads to the formation of bonds between silicon and carbon atoms and nitrogen atoms and to the formation of SiCxNy layers. The as-deposited films were analyzed with respect to their element composition, state of chemical bonding, mechanical and optical properties, and wetting behavior. It was found that all synthesized films were amorphous and represented a mixture of SiCxNy with free carbon. The films’ surfaces were smooth and uniform, with a roughness of about 0.2 nm. Depending on the deposition conditions, SiCxNy films within the composition range 24.1 < Si < 44.0 at.%, 22.4 < C < 56.1 at.%, and 1.6 < N < 51.9 at.% were prepared. The contact angle values vary from 37° to 67°, the hardness values range from 16.2 to 34.4 GPa, and the optical band gap energy changes from 1.81 to 2.53 eV depending on the synthesis conditions of the SiCxNy layers. Particular attention was paid to the study of the stability of the elemental composition of the samples over time, which showed the invariance of the composition of the SiCxNy films for five months.

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Section: Resultsmentioning

confidence: 99%

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

et al. 2023

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“…Major concern for the future global technology is the limitation of the silicon (Si)-based electronics that is nearly reached. For instance, the efficiency of solar cells made from Si does not showing any progress since the last decade [1,2]. Similar thing happened in the utilization of Si for thermoelectric and fieldeffect transistor (FET) purposes [3].…”

Section: Introductionmentioning

confidence: 96%

First-principle calculation of silicon carbide (SiC) for the superhard material applications

Alfanny

Piliang

Ramadhan

2022

J. Phys.: Conf. Ser.

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Silicon carbide is considered to be one of the superhard material with the microhardness value more than 20 GPa. Here we report the theoretical study based on density functional theory methods on the SiC system. Three different semilocal functionals of LDA-PZ, GGA-PBE, and SCAN are utilized. The cubic crystal structure of SiC are used in all of our calculations that is fully-relaxed to obtain realistic description of both structural and electronical parameters. For the lattice parameter and insulating gap estimation, SCAN functional gives the best comparison with the experimental value with 4.34 Å and 1.67 eV respectively. The calculated Vickers hardness formula based on the SCAN functional gives the value of 36 GPa

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“…Silicon Carbide (SiC), a wide-bandgap semiconductor material, has attracted tremendous attention from both academics and industries in recent years. SiC possesses outstanding electrical properties for the power device application, including high breakdown electric field (2.5 × 10 6 V cm −1 ), high thermal conductivity (5 W cm −1 K −1 ), high operating temperature (low intrinsic carrier concentration up to 900 °C) and high saturation drift velocity (2 × 10 7 cm s −1 ) [ 1 ]. Although there have been more than 250 polytypes of SiC reported, the most commonly used polytypes are 4H-SiC, 6H-SiC and 3C-SiC.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, 6H-SiC and 4H-SiC wafers with diameters up to 8 inches have already been commercialized. Following our previous review of the SiC MOSFET fabrication process [ 1 ], in this review article, we focus on the recent advances in chemical mechanical polishing (CMP) technologies, which aim to provide atomically flat and subsurface damage-free SiC substrates for high-quality epitaxy and high-performance power device fabrication. Given that SiC is well-known for its exceptionally high hardness, brittleness and inertness, the current CMP of SiC usually suffers from high machining costs and low throughput.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

et al. 2022

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Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

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Review of Silicon Carbide Processing for Power MOSFET

Cited by 76 publications

References 205 publications

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

First-principle calculation of silicon carbide (SiC) for the superhard material applications

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

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