AlN/GaN MOS-HEMTs With Thermally Grown $\hbox{Al}_{2} \hbox{O}_{3}$ Passivation

Taking, S.; MacFarlane, D.; Wasige, Edward

doi:10.1109/ted.2011.2114665

Cited by 33 publications

(21 citation statements)

References 24 publications

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“…Simultaneously high f T / f max of 55/86 GHz were obtained by extrapolating the current gain (|h 21 | 2 ) and unilateral power gain (U ), respectively, using a −20 dB/decade slope. Small-signal equivalent circuit model elements of the MISHEMT were extracted from the measured S-parameters [14], as shown in Fig. 8(b).…”

Section: Device Results and Discussionmentioning

confidence: 99%

“…Recently, a high-quality AlN/GaN epitaxial growth has been reported with a large 2-DEG concentration (>10 13 cm −2 ) and high mobility (>1000 cm 2 /V · s) for extremely thin AlN barriers (<6 nm) [18]. However, the ultrathin AlN barriers generally suffer from surface sensitivity and lead to large gate leakage currents unless they are well passivated [13], [14]. In situ SiN x grown in the metal-organic chemical vapor deposition (MOCVD) reactor immediately after the heterostructures has shown advantages over other ex situ deposited insulators for GaN HEMTs for reasons, such as better surface passivation effects, suppression of gate leakage current, and elimination of process-and growth-related defects [17], [20]- [22].…”

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confidence: 99%

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Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric

Lü

Jiang

et al. 2015

IEEE Trans. Electron Devices

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This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiN x /AlN/GaN MISHEMTs. The devices featured in situ grown SiN x by metal-organic chemical vapor deposition as a gate dielectric and for surface passivation. Selective source/drain regrowth was incorporated to reduce contact resistance. SiN x sidewall spacers and low-κ benzocyclobutene polymer (κ = 2.65) supporting layers were employed under the gate head to minimize the parasitic capacitance for high-frequency operation. The device with a gate length (L G ) of 0.23 μm exhibited a maximum drain current density (I DS ) exceeding 1600 mA/mm with a high ON/OFF ratio (I ON /I OFF ) of over 10 7 . The current gain cutoff frequency ( f T ) and maximum oscillation frequency ( f max ) were 55 and 86 GHz, respectively. In addition, the effect of temperature, from room temperature up to 550 K, on the dc and RF performances of the gate-last self-aligned MISHEMTs was studied.Index Terms-AlN/GaN, benzocyclobutene (BCB) planarization, gate-last self-aligned, high-temperature, in situ SiN x , MISHEMT, RF, source/drain (S/D) regrowth.

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Section: Device Results and Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric

Lü

Jiang

et al. 2015

IEEE Trans. Electron Devices

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“…Despite the excellent progress of AlN/GaN devices to date, there are still significant challenges to be overcome before they can be fully commercialized. Having a very thin AlN barrier layer, of only a few nm, the devices suffer from surface sensitivity and large gate leakage currents unless the epilayers are well protected . Previously, several dielectrics such as Al 2 O 3 , SiN x , HfO 2 , and Ta 2 O 5 have been explored as gate insulators.…”

Section: Introductionmentioning

confidence: 99%

“…Having a very thin AlN barrier layer, of only a few nm, the devices suffer from surface sensitivity and large gate leakage currents unless the epilayers are well protected . Previously, several dielectrics such as Al 2 O 3 , SiN x , HfO 2 , and Ta 2 O 5 have been explored as gate insulators. However, these insulators are deposited ex situ , which can introduce additional growth‐ and process‐related defects on the devices.…”

Section: Introductionmentioning

confidence: 99%

In situ SiN_x gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si

Lü

Liu

et al. 2014

Physica Status Solidi (a)

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In situ SiN x grown by metal-organic chemical vapor deposition (MOCVD) was employed as the gate dielectric for ultra-thinbarrier AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on Si substrates. Despite the ultra-thin barrier of 1.5 nm, low reverse leakage current of below 10 À7 A cm À2 was obtained with a 7 nm in situ SiN x gate dielectric.The good surface passivation effects of in situ SiN x were also demonstrated by the enhanced source/drain (S/D) current density and the reduced drain current degradation. Furthermore, interface trapping effects in the in situ SiN x /AlN/GaN heterostructures were investigated by double-mode capacitance-voltage (C-V) measurements and frequency dependent conductance analysis. A trap states density of 1.9-3.4 Â 10 12 cm À2 eV À1 with a time constant of 0.8-17 ms were deduced.

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“…Figure 6 shows the small signal models of on-state and off-state of the MOSFET switch device. The parasitic capacitances C s , C d and inductances L g , L s , L d are estimated from the open and short dummy structure [7], respectively. The extrinsic resistances R s , R d , R g are evaluated when the device is biased under the cold condition [8].…”

Section: Introductionmentioning

confidence: 99%

A novel RF switch device using InGaAs MOSFET technology

Zhou

Chang

Zhang

et al. 2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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In this paper, a novel InGaAs metal oxide semiconductor field effect transistor (MOSFET) radio frequency (RF) switch device is demonstrated. The MOSFET RF switch device with 0.3 μm gate length and 10 nm Al 2 O 3 as gate dielectric shows insertion loss of 0.3 dB and isolation of more than 50 dB. A maximum drain current of 250 mA/mm, a peak transconductance of 370 mS/mm, a turn-on resistance of 2.4 Ω·mm and a drain current on-off (I on /I off ) ratio of over 1×10 6 are obtained. The small signal models of this MOSFET switch device are also described. Excellent agreement between measured and simulated demonstrates the validity of this model.

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AlN/GaN MOS-HEMTs With Thermally Grown $\hbox{Al}_{2} \hbox{O}_{3}$ Passivation

Cited by 33 publications

References 24 publications

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric

In situ SiN_x gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si

A novel RF switch device using InGaAs MOSFET technology

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AlN/GaN MOS-HEMTs With Thermally Grown $\hbox{Al}_{2} \hbox{O}_{3}$ Passivation

Cited by 33 publications

References 24 publications

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric

In situ SiNx gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si

A novel RF switch device using InGaAs MOSFET technology

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In situ SiN_x gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si