In this article, multilayer MoS 2 manufactured from a multiple-transfer process of chemical vapor deposition (CVD)-grown monolayer MoS 2 is studied. Because of the lattice mismatch and larger distance between adjacent MoS 2 layers, the interlayer interaction is weakened and the band structure transition from direct to indirect as well as band gap shrinkage effect in multilayer is suppressed, as indicated by Raman and photoluminescence spectra. These structural differences from that of the exfoliated MoS 2 make stacked MoS 2 layers a better configuration for fabricating high-performance MoS 2 field effect transistor (FET). Here, back-gate MoS 2 FETs with different number of layers were fabricated. As the number of layers increases from 1 to 3, the devices' mobility and on/off ratio show an enhancement from 2 to 62 cm 2 /s•V and 10 6 to 10 8 , respectively. Metal-to-insulator transition (MIT) phenomena are also observed in bilayer MoS 2 FET. A distributed resistance-based model is proposed to study the conductivity of weakly coupled MoS 2 layers. Combining the resistance model with temperature dependence characteristics, it is demonstrated that the electron mobility in monolayer MoS 2 is limited by the hopping transport mechanism, whereas the electron in the bilayer can be excited to band-like transport mode because of the immunity of the influence from the charge traps at the substrate, which explains the enhancement of mobility and MIT phenomena. This study is universally valid for other twodimensional materials, paving way to fabricate high-performance nanoelectronics for integrated circuits.
Correlations of enthalpies of food systems containing water fraction from 0.74-0.94 are presented for a temperature range 230-310°K (-50 to 95°F). with these correlations, energy requirement in freezing and thawing foods within the limits of data base used for this work may be computed by providing the identity of food group (meat, juice or vegetable/fruits), water content, initial, and final temperatures.
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