In situ SiNx gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si

Lü, Xing; Ma, Jun; Liu, Zhaojun; Jiang, Huaxing; Huang, Tongde; Lau, Kei May

doi:10.1002/pssa.201300495

Cited by 12 publications

(6 citation statements)

References 16 publications

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“…Although an in situ grown SiN x by MOCVD has been reported to be the optimum passivation layer for III-nitride HEMTs, 4,[17][18][19] interface trapping analysis for the in situ SiN x MIS structures is still limited. Recently, we also demonstrated the use of SiN x in situ grown by MOCVD as gate dielectrics and passivation for AlN/GaN MISHEMTs, 20,21 which show reduced gate leakage current and increased carrier concentration. To further optimize the device structure, a thorough study of the interface trapping is of great importance.…”

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confidence: 99%

“…This improved stoichiometry is a key factor for the significantly reduced hysteresis in the doublemode C-V measurement and hence the remarkably low "slow" trap states density. 9,[21][22][23] In conclusion, we have investigated the interfacial trapping effects of AlN/GaN MIS structures with in situ SiN x gate dielectric grown by MOCVD. Two dominant types of trap states, designated as "slow" and "fast" ones, were identified and characterized using double-mode C-V measurement and frequency dependent conductance analysis, respectively.…”

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confidence: 99%

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Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Lü

Jiang

et al. 2014

Applied Physics Letters

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We report the use of SiNx grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiNx/AlN interface exhibits remarkably low trap state densities in the range of 1011–1012 cm−2eV−1. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiNx layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiNx as an effective gate dielectric for AlN/GaN MIS devices.

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confidence: 99%

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confidence: 99%

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Lü

Jiang

et al. 2014

Applied Physics Letters

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“…Fig. 2(a) shows the typical gate leakage current measurements of the in situ SiN x /AlN/GaN MIS diode at two different temperatures, RT and 550 K. Even at a high temperature of 550 K, the reverse gate leakage current density of the MIS diode is below 10 −7 A/cm 2 , remarkably lower than that of similar structures using other dielectrics [30]. The 7-nm in situ SiN x on the AlN/GaN heterostructure can tolerate a forward gate bias up to 4 V at RT, as shown in Fig.…”

Section: Aln/gan Heterostructure Andmentioning

confidence: 93%

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<italic>x</italic> Gate Dielectric

Lü

Jiang

et al. 2015

IEEE Trans. Electron Devices

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This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiN x /AlN/GaN MISHEMTs. The devices featured in situ grown SiN x by metal-organic chemical vapor deposition as a gate dielectric and for surface passivation. Selective source/drain regrowth was incorporated to reduce contact resistance. SiN x sidewall spacers and low-κ benzocyclobutene polymer (κ = 2.65) supporting layers were employed under the gate head to minimize the parasitic capacitance for high-frequency operation. The device with a gate length (L G ) of 0.23 μm exhibited a maximum drain current density (I DS ) exceeding 1600 mA/mm with a high ON/OFF ratio (I ON /I OFF ) of over 10 7 . The current gain cutoff frequency ( f T ) and maximum oscillation frequency ( f max ) were 55 and 86 GHz, respectively. In addition, the effect of temperature, from room temperature up to 550 K, on the dc and RF performances of the gate-last self-aligned MISHEMTs was studied.Index Terms-AlN/GaN, benzocyclobutene (BCB) planarization, gate-last self-aligned, high-temperature, in situ SiN x , MISHEMT, RF, source/drain (S/D) regrowth.

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“…To create Schottky contacts, Ni(120 nm) was then evaporated and lifted off on the SiN cap (Figure 2c). Here, the SiN layer serves as a gate dielectric, which reduces gate leakage and improves gate control [38]. A shallow etch of the SiN cap was performed using buffered oxide etchant (BOE) to remove surface contamination before Ni deposition.…”

Section: Fabrication Processmentioning

confidence: 99%

Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

Ahmed

Weinstein

2021

Micromachines

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This work presents a comprehensive comparison of switchable electromechanical transducers in an AlN/GaN heterostructure toward the goal of reconfigurable RF building blocks in next-generation ad hoc radios. The transducers’ inherent switching was achieved by depleting a 2D electron gas (2DEG) channel, allowing an RF signal launched by interdigital transducers (IDTs) to effectively excite the symmetric (So) Lamb mode of vibration in the piezoelectric membrane. Different configurations for applying DC bias to the channel for electromechanical actuation in the piezoelectric are discussed. Complete suppression of the mechanical mode was achieved with the transducers in the OFF state. Equivalent circuit models were developed to extract parameters from measurements by fitting in both ON and OFF states. This is the first time that an extensive comparative study of the performance of different switchable transducers in their ON/OFF state is presented along with frequency scaling of the resonant mode. The switchable transducer with Ohmic IDTs and a Schottky control gate showed superior performance among the designs under consideration.

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In situ SiN_x gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si

Cited by 12 publications

References 16 publications

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric

Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

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