AlN Checker-mode Resonators with Routing Structures

Liu, Jieyu; Zhou, Jie; Zou, Yang; Gao, Chao; Xie, Ying; Sun, Chengliang

doi:10.1109/ultsym.2019.8925588

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…The Q s values and k 2 eff are important parameters for the LWRs, and both of them were extracted based on the measured results by using Equations (5) and (6) [ 22 ]. The Q s value and the k 2 eff of the LWR with d = 12 μm were up to 4019.8 and 0.6%, respectively.…”

Section: Measurement and Discussionmentioning

confidence: 99%

“…The top IDT electrodes are patterned by a 200 nm-thick Al layer, connected to alternate between the ground and RF signals, and the bottom electrodes are patterned by a 200 nm-thick Mo layer. The top IDT electrodes and bottom electrodes are combined to actuate the S0 mode in the AlN film and the frequency of LWRs is mainly dependent on the p of IDTs, which can be expressed in Equation (1) [ 22 ]. For LWRs, the IDTs’ central regions located at the potential maximums and displacement-amplitude minimums can contribute to achieving ideal harmonic conditions.…”

Section: Design and Micro-fabricationmentioning

confidence: 99%

See 1 more Smart Citation

High Quality-Factor and Spectrum-Clean AlN Lamb-Wave Resonators with Optimized Lateral Reflection Boundary Conditions and Transducer Design

Sun

Zhang

et al. 2022

Micromachines

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This paper presents a high quality-factor (Q) and spectrum-clean AlN Lamb-wave resonator (LWR). The width of its lateral reflection boundary was optimized to weaken the transverse modes’ coupling and wave guiding, and then to improve the LWR’s Q value and spectral purity, which was verified by finite element analysis and experimental characterization. In addition, the series resonance quality factor (Qs) value of the interdigitated (IDT)-Ground LWR is similar to that of the IDT-Floating LWR, but its parallel resonance quality factor (Qp) is nearly doubled, due to the reduction of the electrical loss induced by its static capacitance (C0). The measured results show that the designed LWR with optimized boundary reflection conditions and IDT-Ground structure exhibit Qs and Qp values as high as 4019.8 and 839.5 at 401.2 MHz and 402.9 MHz, respectively, meanwhile, it has good spectral purity. Moreover, the influence of the metal ratio and material of the LWR’s IDT electrodes on the device’s performance was also studied by theoretical analysis and experimental verification.

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Section: Measurement and Discussionmentioning

confidence: 99%

Section: Design and Micro-fabricationmentioning

confidence: 99%

High Quality-Factor and Spectrum-Clean AlN Lamb-Wave Resonators with Optimized Lateral Reflection Boundary Conditions and Transducer Design

Sun

Zhang

et al. 2022

Micromachines

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show abstract

“…The small deviation may have been caused by the fabrication errors of the geometric dimensions and by the slight discrepancy of AlN Young’s modulus between the simulation and the actual fabrication. The effective electromechanical coupling coefficient ( k 2 eff ) can be extracted as 1% via Equation (4) [ 19 ]:

…”

Section: Measurement and Discussionmentioning

confidence: 99%

A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

et al. 2021

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This paper presents a micro-electro-mechanical systems (MEMS) processing technology for Aluminum Nitride (AlN) Lamb-wave resonators (LWRs). Two LWRs with different frequencies of 402.1 MHz and 2.097 GHz by varying the top interdigitated (IDT) periods were designed and fabricated. To avoid the shortcomings of the uncontrollable etching of inactive areas during the releasing process and to improve the fabrication yield, a thermal oxide layer was employed below the platted polysilicon sacrificial layer, which could define the miniaturized release cavities well. In addition, the bottom Mo electrode that was manufactured had a gentle inclination angle, which could contribute to the growth of the high-quality AlN piezoelectric layer above the Mo layer and effectively prevent the device from breaking. The measured results show that the IDT-floating resonators with 12 μm and 2 μm electrode periods exhibit a motional quality factor (Qm) as high as 4382 and 1633. The series resonant frequency (fs)·Qm values can reach as high as 1.76 × 1012 and 3.42 × 1012, respectively. Furthermore, Al is more suitable as the top IDT material of the AlN LWRs than Au, and can contribute to achieving an excellent electrical performances due to the smaller density, smaller thermo-elastic damping (TED), and larger acoustic impedance difference between Al and AlN.

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“…27) J. Y. Liu et al found that CKMRs with circle-shaped checker electrodes can achieve a K eff 2 of 5.12% and fewer spurious modes. 28) Here, we design CKMRs with circle-shaped checker electrodes and adopt four types of acoustic excitation configurations. The influence of electrode metallization rate on the K eff 2 is investigated by changing the ratio of the top electrode pad radius (R/r).…”

Section: Introductionmentioning

confidence: 99%

Influence of electrode metallization rate on the effective electromechanical coefficient of AlN checker-mode lamb wave resonator

Tong¹,

Liu²,

Zhou³

et al. 2022

Jpn. J. Appl. Phys.

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The effective electromechanical coupling coefficient (Keff^2) is one of the crucial parameters to evaluate the performance of resonators. However, the low effective electromechanical coupling coefficient Keff^2 limits the application of lamb wave resonators (LWRs) in filters. This work presents the impact of metallization rate on the Keff^2 of AlN Checker-mode resonators (CKMRs) by using the finite element analysis approach for the first time. Four types of piezoelectric effect excitation configurations are proposed with different electrode designs based on AlN CKMRs. The results show that CKMRs have the largest Keff^2 with the metallization rate of 0.25-0.31 for top electrode. Meanwhile, when the metallization rate of top electrode varies from 0.2 to 0.7, the Keff^2 of open CKMRs possess the most remarkable enhancement about 235% of CKMRs. By properly optimizing the electrode design, CKMRs exhibit potential in the commercial applications.

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AlN Checker-mode Resonators with Routing Structures

Cited by 6 publications

References 12 publications

High Quality-Factor and Spectrum-Clean AlN Lamb-Wave Resonators with Optimized Lateral Reflection Boundary Conditions and Transducer Design

High Quality-Factor and Spectrum-Clean AlN Lamb-Wave Resonators with Optimized Lateral Reflection Boundary Conditions and Transducer Design

A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

Influence of electrode metallization rate on the effective electromechanical coefficient of AlN checker-mode lamb wave resonator

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