AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) grown on 150 mm Si(111) substrates are reported in this work. The sheet resistance of the AlGaN/GaN HEMT structure is as low as 260 AE 3:4 /Ã. The electron mobility is in the range of 1560 -1650 cm 2 V À1 s À1 . The crack-free mirror-like wafers were obtained by using a simple AlGaN/AlN buffer. The mechanism for dislocation reduction in GaN above the AlGaN/AlN buffer is presented in this work. The dislocation density is around ð1:5 { 2:5Þ Â 10 9 /cm 2 . Some of the wafers were processed and a current density close to 1 A/mm was achieved. The maximum transconductance was 270 mS/mm and the on-state resistance was as low as 2.6 mm.

Suppression of domain formation in GaN layers grown on Ge(111)

“…For 47 nm of GaN a (0 0 0 2) and (1 0 1 2) o FWHM value of, respectively, 408 and 935 arcsec is obtained. This value is comparable to the best GaN grown on Si(111) by metal organic chemical vapor phase deposition, obtained by growing 1.3 mm GaN and using buffer layers in between the GaN and Si substrate [7]. Our GaN layers show comparable quality for a thickness of only 47 nm GaN and without any buffer layer.…”

Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

“…However, the achieved maximum drain-source current and transconductance are significantly higher. These dc performances are comparable to the highest reported performances by few other groups [8][9][10]. We have also noted a much higher yield of working devices and excellent uniformity in terms of devices performances over the 2 in wafer.…”

Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

“…The radius of curvature was measured as 43 m, which compares well with that reported on smaller wafers, e.g. [3,7], but results in a height from a level plane of 116 μm significantly greater than the 65 μm that would be observed on a 150 mm diameter wafer with the same radius of curvature.…”