Suppression of domain formation in GaN layers grown on Ge(111)

Lieten, Ruben; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf

doi:10.1016/j.jcrysgro.2008.11.077

Cited by 8 publications

(13 citation statements)

References 7 publications

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“…2 shows the same GaN layer at lower magnification. From this image it is clear that the GaN is of high crystal quality, which is in agreement with HRXRD results [4]. Considering a theoretical lattice mismatch of À20.3% between GaN and Ge (1 1 1), this HRTEM image shows remarkable crystal quality.…”

Section: Introductionsupporting

confidence: 89%

“…These domains are GaN grains rotated relative to each other around the GaN-(0 0 0 1) zone axis by about 41 clockwise and counterclockwise with respect to the Ge substrate [3]. Recently we showed that the formation of rotated domains can be suppressed by enhancing step flow growth with respect to 2D nucleation [4]. This can be achieved by increasing the growth temperature, decreasing the N flux or increasing the step density [4].…”

Section: Introductionmentioning

confidence: 99%

“…Recently we showed that the formation of rotated domains can be suppressed by enhancing step flow growth with respect to 2D nucleation [4]. This can be achieved by increasing the growth temperature, decreasing the N flux or increasing the step density [4]. Characterization by high resolution X-ray diffraction (HRXRD) of a 47 nm thick layer of GaN revealed a (0 0 0 2) and (1 0 1 2) o full width at half maximum (FWHM) value of respectively 408 and 935 arc sec.…”

Section: Introductionmentioning

confidence: 99%

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Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy

Lieten

Richard

Degroote

et al. 2011

Journal of Crystal Growth

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Section: Introductionsupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy

Lieten

Richard

Degroote

et al. 2011

Journal of Crystal Growth

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“…The high temperature GaN buffer layer is grown at 850 C by supplying a Ga flux with 1.05 x10 -6 Torr beam equivalent pressure, just after formation of Ge 3 N 4 . Deposition of GaN at the above mentioned growth parameters leads to the suppression of domain formation in the GaN layer by enhancing step flow growth with respect to 2D nucleation [9]. Substrate temperatures below 850 C, for the given nitrogen plasma settings, lead to the formation of rotated GaN domains [9].…”

Section: Influence Of Buffer Layermentioning

confidence: 98%

“…Deposition of GaN at the above mentioned growth parameters leads to the suppression of domain formation in the GaN layer by enhancing step flow growth with respect to 2D nucleation [9]. Substrate temperatures below 850 C, for the given nitrogen plasma settings, lead to the formation of rotated GaN domains [9]. For this raison, we did not use LT GaN as starting buffer layer.…”

Section: Influence Of Buffer Layermentioning

confidence: 99%

Indium Gallium Nitride on Germanium by Molecular Beam Epitaxy

et al. 2011

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Indium containing III-Nitride layers are predominantly grown by heteroepitaxy on foreign substrates, most often Al 2 O 3 , SiC and Si. We have investigated the epitaxial growth of In x Ga 1-x N (InGaN) alloys on Ge substrates. First we looked at the influence of buffer layers between the InGaN and Ge substrate. When applying a high temperature (850 C) GaN buffer, the InGaN showed superior crystal quality. Furthermore the influence of growth parameters on the structural quality and composition of InGaN layers has been looked into. For a fixed gallium and nitrogen supply, the indium beam flux was increased incrementally. For both nitrogen-as well as for metal (Ga + In) rich growth conditions, the In incorporation increases for increasing In flux. However, for metal rich growth conditions, segregation of metallic In is observed. An optimum in crystal quality is obtained for a metal:nitrogen flux ratio close to unity. The XRD FWHM of the GaN (0002) reflection increases significantly after InGaN growth. Apparently the presence of indium deteriorates the GaN buffer during InGaN growth. The mechanism of the effect is not known yet.

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Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy

Lieten

Tseng

et al. 2013

CrystEngComm

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In x Ga 1−x N (InGaN) alloys are predominantly grown by heteroepitaxy on foreign substrates. Most often Al 2 O 3 , SiC and Si are used as substrates, however this complicates vertical conduction from the InGaN surface to the substrate backside. Therefore we investigate the heteroepitaxial growth of InGaN layers on Ge substrates. Single crystalline InGaN was obtained and domain formation was suppressed by using a thin GaN buffer layer. The InGaN shows compressive strain, which follows from the lattice mismatch with the GaN buffer layer. The In distribution is uniform throughout the InGaN layer, with no significant In segregation within the layer. Only at the surface, in a very thin layer of 20 nm, strong In segregation is observed with about 50% In. InGaN/GaN/Ge diodes show vertical current conduction of 1 A cm −2 at −2 V. InGaN grown on Ge is therefore promising for device applications with preferred vertical conduction.

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Suppression of domain formation in GaN layers grown on Ge(111)

Cited by 8 publications

References 7 publications

Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy

Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy

Indium Gallium Nitride on Germanium by Molecular Beam Epitaxy

Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy

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