Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Boyd, Adam R.; Degroote, Stefan; Leys, Maarten; Schulte, Frank; Rockenfeller, O.; Luenenbuerger, M.; Germain, Marianne; Kaeppeler, J.; Heuken, M.

doi:10.1002/pssc.200880925

Cited by 63 publications

(36 citation statements)

References 10 publications

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“…Recently, remarkable results have been obtained on silicon substrate [4]- [6]. Silicon substrates offer an interesting alternative to silicon carbide through their low cost and their large area availability [7]. One advantage of using silicon as a substrate is the possibility of cointegrating GaN-HEMTs with CMOS main frame technology [8].…”

Section: Introductionmentioning

confidence: 99%

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Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Rennesson

Lecourt

Defrance

et al. 2013

IEEE Trans. Electron Devices

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In this paper, we propose to optimize Al 0.29 Ga 0.71 N/GaN heterostructures on silicon substrate to obtain high electron mobility transistors featuring highpower/frequency performances. The polarization electric fields are engineered by varying the layer thicknesses of the cap and the barrier, and by changing the type of buffer (GaN or AlGaN). The aim of this paper is to find the best tradeoff between the active layer thickness reduction and the achievement of a reasonable drain current to satisfy the requirements for high performances. The optimum heterostructure device presents an output power density of 1.5 W/mm at 40 GHz, among the best reported on silicon substrate.Index Terms-AlGaN/GaN, high electron mobility transistor (HEMT), Ka-band, millimeter-wave transistor, power density.

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Section: Introductionmentioning

confidence: 99%

“…Si wafer [17]. Even though it is not as advanced compared with MOCVD [7], MBE developments on larger size silicon substrate are under progress [18].…”

Section: Introductionmentioning

confidence: 99%

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Rennesson

Lecourt

Defrance

et al. 2013

IEEE Trans. Electron Devices

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“…However, to date, there has been less success in achieving high quality AlGaN/GaN heterostructure on 200 mm Si substrates due to issues like epilayer cracking, wafer bowing, and high density of point and line defects when nitride stack thickness exceeds 3.0 lm. To showcase high electron mobility transistors (HEMTs) on 200 mm Si platform with comparatively similar device performances levels as reported currently on Si substrate platform, 7,8 it is necessary to grow thicker GaN buffer to minimize the buffer leakage and also to improve the layer crystalline quality.…”

mentioning

confidence: 97%

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

et al. 2012

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“…It should be noted that the silicon is oriented (111) rather than the standard (100) in order to have trigonal symmetry, which better matches the hexagonal symmetry of GaN. With silicon substrates easily available in 150 mm and 200 mm diameters and GaN on 200 mm silicon substrate growth capabilities as early as 2009, 25 this approach allows integration using standard electronics processing lines. This has the potential to reduce costs for industrialization of GaN based power devices as a product and allows large-scale, high-quality production to be achieved more easily (see the article by Semond in this issue).…”

Section: The Materials Challengementioning

confidence: 99%

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

et al. 2015

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IntroductionPower electronics is the branch of electronics specifi cally dealing with collecting, delivering, and storing energy, including general and local/commodity energy supplies, by conversion and control of electrical power.1 Specifi c applications range from power supply systems to motor vehicle drives, 2 photovoltaic and fuel cell converters, inverters, and high-frequency heating, 3 among many others. The impact of power electronics has already been signifi cant and is anticipated to be even more so in the future for effi cient energy production and management.As in most other electronics areas, silicon also has been the predominant semiconductor in power electronics to date. However, with wide bandgap materials power electronic components are faster, smaller, more effi cient, and more reliable than their Si-based counterparts. Moreover, they permit the operation of devices at higher voltages, temperatures, and frequencies, 4 making it possible to reduce volume and weight in a wide range of applications. This could lead to large energy savings in industrial and consumer appliances, accelerate widespread use of electric vehicles and fuel cells, and integrate renewable energy into the electric grid.The power electronics market as a whole was about $20 billion in 2012, and power electronics will remain one of the most attractive branches of the semiconductor industry over the next decade. 5 The latest power electronics market forecasts 6 predict an increase of 60% for low-voltage technologies (below 900 V) by the year 2020, accompanied by an approximately 100% market increase for medium (1.2-1.7 kV) and high voltage (2 kV and above) technologies. This implies that the largest market increase in this sector over the next decade (medium and high voltage) will rely on semiconductor technologies beyond silicon (also see article by Okumura in this issue). This can be likened to a second revolution, equivalent to the introduction of large scale fabrication of silicon complementary metal oxide semiconductor (CMOS) technology, which led to the commoditization of electronics and formed the basis of our modern technological era. The power electronics revolution could be setting the basis for a world centered on greener technologies: improved energy conversion effi ciencies, faster switching, and more compact, lighter systems with better thermal management and tolerance will have tremendous impact on industrialization and energy systems, encompassing energy savings, renewable energy systems, and Greener technologies for more effi cient power generation, distribution, and delivery in sectors ranging from transportation and generic energy supply to telecommunications are quickly expanding in response to the challenge of climate change. Power electronics is at the center of this fast development. As the effi ciency and resiliency requirements for such technologies can no longer be met by silicon, the research, development, and industrial implementation of wide bandgap semiconductors such as gallium nitride (GaN) and sil...

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Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Cited by 63 publications

References 10 publications

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

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