AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

Leclaire, P.; Chenot, Sébastien; Buchaillot, L.; Cordier, Y.; Théron, Didier; Faucher, M.

doi:10.1088/0268-1242/29/11/115018

Cited by 9 publications

(11 citation statements)

References 60 publications

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“…As reported in Ref. the leakage current in thin structures HEMT is very sensitive to the vicinity of the Silicon substrate.…”

Section: Reduction Of the Aln Growth Temperaturementioning

confidence: 66%

“…As reported in Ref. [15] the leakage current in thin structures HEMT is very sensitive to the vicinity of the Silicon substrate. The effect of lowering the AlN growth temperature is also noticeable for the vertical leakage current measured between the biased surface ohmic contacts and the substrate which is grounded (Figure 4).…”

Section: Reduction Of the Aln Growth Temperaturementioning

confidence: 68%

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Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Cordier

Comyn

Frayssinet

et al. 2017

Physica Status Solidi (a)

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Despite the fact that a lower growth temperature is generally considered as a drawback for achieving high crystal quality, the necessity to reduce the nucleation temperature of AlN on Silicon has permitted Molecular Beam Epitaxy (MBE) to demonstrate high performance for GaN transistors operating at high frequency. Compared to Metal‐Organic Vapor Phase Epitaxy (MOVPE), the control of the interface between the AlN nucleation layer and the substrate is easier and the reduced growth temperature allows to obtain a more electrically resistive interface while keeping good crystal quality. Moreover, it is shown that further reducing the growth temperature within the nucleation and stress mitigating layers has a noticeable impact on the lateral and vertical buffer leakage currents. At the same time the buffer of MBE grown HEMT structures exhibits low RF propagation losses (below 0.5 dB mm−1 up to 70 GHz). Also, results obtained with structures regrown by MOVPE on MBE AlN‐on‐Si templates confirm that the thermal budget is critical for the resistivity of AlN/Si. On the other hand, the insertion of a 1.5 μm thick Al0.05Ga0.95N layer within a 2 μm HEMT structure significantly improves the vertical breakdown voltage up to 740 V permitting to compare favorably with MOVPE epilayers with similar total thickness.

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“…As reported in Ref. the leakage current in thin structures HEMT is very sensitive to the vicinity of the Silicon substrate.…”

Section: Reduction Of the Aln Growth Temperaturementioning

confidence: 66%

Section: Reduction Of the Aln Growth Temperaturementioning

confidence: 68%

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Cordier

Comyn

Frayssinet

et al. 2017

Physica Status Solidi (a)

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“…These are dramatically enhanced electron transport properties compared with the above‐mentioned results we obtained on HR silicon with MOVPE but also with the ones we previously obtained with MBE .…”

Section: Methodsmentioning

confidence: 99%

“…For such applications that require lower performances, it is interesting to work with thin structures for cost and thermal consideration. Typically, structures with thicknesses between 300 nm and 1 μm are achieved in order to avoid cracking while keeping relatively low sheet resistance . The purpose of this work is to study in which manner MOVPE growth parameters of the buffer layers and substrate type influence the quality of the HEMT structures and the behavior of transistors.…”

Section: Introductionmentioning

confidence: 99%

Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

Frayssinet¹,

Leclaire

Mohdad³

et al. 2016

Phys. Status Solidi A

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Phone: þ33 4 93 95 42 00, Fax: þ33 4 93 95 83 61The present work is dedicated to the study of the influence of metal-organic vapor phase epitaxy (MOVPE) growth conditions on the properties of AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with thin simple buffer layers on Si(111). In a first series of samples grown on high resistivity silicon, the conditions were varied within the GaN buffer layer while kept unchanged for the AlN nucleation layer and HEMT barrier and cap layers. XRD and AFM revealed some differences in epilayers structural quality especially in case of excessive growth pressure or V/III ratio. Capacitancevoltage (CV) measurements revealed differences in the pinchoff regime of the two-dimensional electron gas (2DEG) located at the AlN/GaN interface. Except in one case, the buffer leakage current between isolated devices correlates with the pinch-off behavior. The majority of these structures exhibited sheet carrier densities of 1 Â 10 13 cm À2 and electron mobility between 1100 and 1400 cm 2 V À1 s À1 depending on the GaN channel growth conditions. The output and transfer characteristics (maximum drain currents and leakage currents) of the transistors are in agreement with the previous electrical characterizations. Thanks to the combination of structural and electrical characterizations we are then able to determine the optimized growth conditions for such HEMT structures. Compared with high resistivity silicon, we obtained better structural and electrical quality on conductive substrates. A 2DEG with an electron mobility of 1700 cm 2 V À1 s À1 has been achieved within a structure with a 0.5 mm thick buffer producing an off-state breakdown voltage of 117 V. This reveals the crucial role of the substrate surface properties on the resulting quality of the heterostructures.

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“…Indeed, if a part of this initial 2.5% mismatch strain remains at the end of growth and if it is sufficient to compensate the tensile strain induced by the TEC mismatch (roughly 0.19–0.32% depending on the growth temperature), then thick crack free GaN structures can be obtained. The quality of the underlying AlN has an impact on the strain relaxation rate in GaN , the growth temperature too. While 0.5–1 μm thick HEMT structures can be grown crack free by MOCVD ( T ∼1000–1100 °C) and by ammonia‐MBE ( T ∼800 °C), up to 4.2 μm thick HEMT structures can be obtained by nitrogen plasma‐assisted MBE (PA‐MBE) thanks to the lower growth temperature ( T ∼730 °C) .…”

Section: Buffer Layer Schemes On Siliconmentioning

confidence: 99%

Al(Ga)N/GaN high electron mobility transistors on silicon

Cordier

2015

Physica Status Solidi (a)

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Phone: þ33 493 954 200, Fax: þ33 493 958 361In this paper, a review of the different buffer layers and heterostructures developed for Al(Ga)N/GaN high electron mobility transistors (HEMTs) on silicon substrate is presented. The difficulties associated with the barrier thinning and the rise of the Al content are discussed. Finally, we compare the DC output characteristics and the small and large signal RF performances of thin barrier AlGaN/GaN HEMTs, thick barrier gate recessed ones, and ultra-thin AlN barrier devices.

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AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

Cited by 9 publications

References 60 publications

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

Al(Ga)N/GaN high electron mobility transistors on silicon

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