AlGaN/GaN biosensor—effect of device processing steps on the surface properties and biocompatibility

Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

“…Furthermore, the physical robustness of III-nitride materials has been demonstrated in high power applications [9,10]. Finally, AlGaN and GaN surfaces exhibit lower toxicity and improved living cell biocompatibility relative to silicon-based surfaces giving rise to the possibility of biosensing [11,12].…”

Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces

“…The wet chemical treatments of GaN and AlGaN surfaces have been intensively studied by means of X-ray photoelectron spectroscopy (XPS). Etchants such as HF [8][9][10], buffered HF [8,11], HCl [8][9][10]12], HNO 3 [8], H 2 SO 4 [8], KOH [9], NaOH [11,12], and NH 4 OH [12][13][14], have been reported to reduce or modify the surface contamination. A recent study by Prabhakaran et al [13] has indicated that 1:10 NH 4 OH:H 2 O etch predominantly removes gallium oxides (Ga 2 O 3 ) from the GaN surface.…”

AlN based microgenerators for powering implantable sensor devices

“…In particular, microcantilevers are promising a good coupling efficiency of the transducer and exhibit a relatively simple configuration. Due to their biocompatibility, AlNfilms offer an essential advantage over lead-containing materials, e. g. PZT [3]. Thus, they are well suited for the integration in implants to measure the parameters such as the intraocular pressure in the human body.…”