2010
DOI: 10.1002/pssc.201000503
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AlN based microgenerators for powering implantable sensor devices

Abstract: In this work we report on microstructures made of AlN for the use as piezoelectric microgenerators in energy harvesting applications. Experimental results on the mechanical and piezoelectrical properties of sputtered AlN thin films deposited on Si(001) substrates as well as results on vibrometry of fabricated microcantilevers are presented. It is shown that due to the constant d33 piezo coefficients of > 5 pm/V, AlN films are well suited for the integration in cantilever structures for powering of low-consumpt… Show more

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Cited by 10 publications
(12 citation statements)
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(12 reference statements)
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“…Offering some promising properties, they also provide a good capability for EH in medical applications. In agreement with literature values, nanocrystalline thin films of AlN show an excellent mechanical stability, proven by laser Doppler vibrometry measurements (LDV) of the resonant mode frequencies of AlN/Al microcantilevers of known dimensions and layer thicknesses (Young's modulus E≈310 GPa, acoustic wave velocity (E/ρ) 1/2 ≈10 4 m/s, biaxial modulus ≈420 GPa), [9]. Process advantages can be found in the low temperature deposition by dc-pulsed magnetron sputtering at 300°C.…”
Section: Aln As a Piezoelectric Materialssupporting
confidence: 61%
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“…Offering some promising properties, they also provide a good capability for EH in medical applications. In agreement with literature values, nanocrystalline thin films of AlN show an excellent mechanical stability, proven by laser Doppler vibrometry measurements (LDV) of the resonant mode frequencies of AlN/Al microcantilevers of known dimensions and layer thicknesses (Young's modulus E≈310 GPa, acoustic wave velocity (E/ρ) 1/2 ≈10 4 m/s, biaxial modulus ≈420 GPa), [9]. Process advantages can be found in the low temperature deposition by dc-pulsed magnetron sputtering at 300°C.…”
Section: Aln As a Piezoelectric Materialssupporting
confidence: 61%
“…Out of d 33 =δ/U the piezoelectric modulus could be directly determined from the measurements to d 33 >5 pm/V. For more information see [9].…”
Section: Aln As a Piezoelectric Materialsmentioning
confidence: 99%
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“…Also, from variations in the membrane surface deflection as a function of applied hydrostatic pressure during the bulge test, the Young's modulus and the residual stress in AlN films were derived to be E ~ 336 GPa and σ ~ 0.41 GPa, respectively, in good agreement with the values obtained by wafer curvature measurements (E ~ 342 GPa and σ ~ 0.31 GPa) and the analysis of oscillating cantilevers (E ~ 310 GPa) [9]. Additionally, these experiments reveal extreme flexibility and robustness of 200 nm thick AlN membranes showing no degradation after multiple bulge cycling with the pressures up to 1.0 bar.…”
Section: Materials Propertiesmentioning
confidence: 96%
“…The detail of the fabrication process is given in reference [8]. The out-ofplane displacement of the cantilever has been measured using Laser Doppler Vibrometry (LDV) (Polytec MSA-500) with a resolution better than 1 pm.…”
Section: Aln-based Cantileversmentioning
confidence: 99%