ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology

Shum, D.; Jaschke, G.; Canning, M.; Kakoschke, R.; Duschl, R.; Sikorski, Ruth L.; Erler, F.; Stiftinger, M.; Duch, Andrew; Power, J. R.; Tempel, G.; Strenz, R.; Allinger, R.

doi:10.1109/imw.2009.5090578

Cited by 7 publications

(3 citation statements)

References 8 publications

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“…In this case, the Al 2 O 3 is the interpoly dielectric/blocking layer in floating-gate/charge trapping nonvolatile Flash memories. [1][2][3][4][5][6][7][8][9][10] The high dielectric constant of Al 2 O 3 ($9) with respect to SiO 2 (3.9) allows increasing the control gate to floating-gate/trapping layer coupling ratio without reducing the physical thickness of the top dielectric, which ensures a sufficient data retention. In addition to the j value, it is desirable that the blocking layer has a wide bandgap, ensuring good data retention by reducing the leakage from the trapping layer to the control gate.…”

Section: Introductionmentioning

confidence: 99%

Electron trapping in amorphous Al2O3

Salomone

Campabadal

Faigon

2018

Journal of Applied Physics

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The electron trapping in MOS capacitors with amorphous Al 2 O 3 as an insulating layer was studied through pulsed capacitance-voltage technique. A positive shift of the voltage value corresponding to a constant capacitance (V C) was observed. The dependences of the voltage instability with the applied bias and the charging time were investigated. Two different contributions could be distinguished: a hysteresis phenomenon observed on each measurement cycle, and a permanent accumulated V C-shift to which each measurement cycle contributes. A physical model based on tunneling transitions between the substrate and defects within the oxide was implemented. From the fitting procedure within the energy range covered in our measurements (1.7-2.7 eV below the conduction band edge), the trap density was found to decrease exponentially with trap energy depth from 3.0 Â 10 20 cm À3 eV À1 to 9.6 Â 10 18 cm À3 eV À1 , with a uniform spatial distribution within the first 2 nm from the semiconductor interface for the hysteresis traps.

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Section: Introductionmentioning

confidence: 99%

Electron trapping in amorphous Al2O3

Salomone

Campabadal

Faigon

2018

Journal of Applied Physics

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“…In a floating gate-type memory device, it has been demonstrated that Al 2 O 3 can be integrated as an inter-poly dielectric (IPD). [1][2][3][4] Likewise, charge-trap type memory devices, widely known as TaN-Al 2 O 3 -Si 3 N 4 -SiO 2 -Si (TANOS), demonstrate excellent performance under lower operation voltage owing to Al 2 O 3 blocking oxides and high work function metal gate electrodes. [5][6][7] Recently, it has been demonstrated that high temperature oxygen annealing of the Al 2 O 3 blocking layer can improve the retention property in conjunction with program/erase (P/E) speed and endurance characteristics.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Date Retention Improvement by High Temperature Annealing of Al₂O₃ Blocking Layer in Flash Memory Device

Park¹,

Park²,

Lee³

et al. 2011

Jpn. J. Appl. Phys.

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The mechanism underlying improved data retention via high-temperature oxygen annealing of the Al2O3 blocking layer in a charge-trap type flash memory device is investigated in comparison with the case of high-temperature nitrogen annealing. The results show that significant improvement of the retention property can be achieved by oxygen annealing at 1100 °C, compared to nitrogen annealing. Experimental evidence indicated that the underlying mechanism does not arise from suppression of the trap-assisted tunneling current through the blocking oxide; instead it is caused by a reduction of the thermionic emission component of the charge loss factor. This is possibly due to changes of the conduction band offset of the crystallized Al2O3.

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“…Among them, SiO 2 /Al x O y /SiO 2 (OAO) structure is one of the promising candidates with advantages of high dielectric constant, low trap density, high tunnel barrier, and process stability of aluminum oxide [4], [5]. However, the low-field leakage characteristic of OAO IPD is still an issue when compared to the robustness of ONO IPD against the leakage.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays

Lee

Park

Choi

et al. 2010

IEEE Electron Device Lett.

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We investigate the retention reliability of a 51-nmnode 16-GB NAND Flash cell transistor comprising SiO 2 /Al x O y / SiO 2 inter-poly dielectric (OAO IPD). Despite the fact that OAO IPD retains low trapping rate being beneficial to retention reliability, the trap sites are located on shallow energy level, yielding a large amount of trap-assisted tunneling current at high temperature. Therefore, experimental results show two incompatible data retention characteristics of OAO IPD, namely, 33% worse V TH shift at 200 • C 2-h bake and 53% improved V TH shift after one week at 25 • C, when compared to the case of ONO IPD.Index Terms-High-k dielectric, inter-poly dielectric (IPD), NAND Flash memory, retention reliability.

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ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology

Cited by 7 publications

References 8 publications

Electron trapping in amorphous Al2O3

Electron trapping in amorphous Al2O3

Mechanism of Date Retention Improvement by High Temperature Annealing of Al₂O₃ Blocking Layer in Flash Memory Device

Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays

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ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology

Cited by 7 publications

References 8 publications

Electron trapping in amorphous Al2O3

Electron trapping in amorphous Al2O3

Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device

Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays

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Mechanism of Date Retention Improvement by High Temperature Annealing of Al₂O₃ Blocking Layer in Flash Memory Device