We compare the luminescence efficiency (i.e., room-temperature photoluminescence intensity), fluctuations in composition and thickness, degree of localization, and luminescence decay times of In0.37Ga0.63As0.983N0.017 quantum wells grown by molecular-beam epitaxy at different temperatures and annealed under a comprehensive variety of conditions. Luminescence efficiency is not directly coupled to structural nonuniformity or localization, and even three-dimensional growth is not detrimental by itself. In contrast, there is always a correlation between luminescence efficiency and nonradiative decay time. Therefore, the luminescence efficiency of InGaAsN quantum wells depends almost exclusively on the density of nonradiative recombination centers, while the influence of structural nonuniformity is negligible.
In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al 2 O 3 stacks for flash memories on the annealing temperature (T A ). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T A . The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al 2 O 3 stacks.Index Terms-Al 2 O 3 , atomic force microscopy (AFM), dielectric breakdown, electrical characterization, high-k.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.