Influence of the manufacturing process on the electrical properties of thin (&lt;4nm) Hafnium based high-k stacks observed with CAFM

Lanza, Mario; Porti, M.; Nafrı́a, Montserrat; Benstetter, Günther; Frammelsberger, Werner; Ranzinger, Heiko; Lodermeier, Edgar; Jaschke, G.

doi:10.1016/j.microrel.2007.07.045

Cited by 35 publications

(29 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The most powerful techniques to conduct such nanoscale studies are the conductive atomic force microscope (CAFM) [115][116][117][118][119] and the scanning tunneling microscope (STM) [120][121]. As an example, CAFM studies scanning mechanically exfoliated h-BN sheets with different thickness revealed one of the most homogeneous tunneling currents ever reported in a dielectric ( Figure 6) [122].…”

Section: -Use Of H-bn As Dielectricmentioning

confidence: 99%

“…The nomenclature t OX is used for similarity with the dielectric breakdown literature [116,164], although h-BN is not an oxide film. In-plane defects don't modify the effective thickness of the h-BN stack, and just produce a linear increase of area for current flow (A eff ), represented with d eff (diameter of A eff ) in the schematic of Figure 9d.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

See 1 more Smart Citation

On the use of two dimensional hexagonal boron nitride as dielectric

Hui

Pan

Shi

et al. 2016

Microelectronic Engineering

109

View full text Add to dashboard Cite

Section: -Use Of H-bn As Dielectricmentioning

confidence: 99%

Section: Accepted Manuscriptmentioning

confidence: 99%

On the use of two dimensional hexagonal boron nitride as dielectric

Hui

Pan

Shi

et al. 2016

Microelectronic Engineering

109

View full text Add to dashboard Cite

“…It is widely known that high annealing temperatures produce the polycrystallization of the high-k film [95], which has been shown to affect its electronic properties [96]. Initially, there were concerns that leakage current densities may be higher across polycrystalline dielectrics as defective grain boundary regions may enhance electronic conduction.…”

Section: Physical Origin Of Resistive Switching In Hafnium Dioxidementioning

confidence: 99%

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

2014

View full text Add to dashboard Cite

Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0”) and a low resistive state (LRS or “1”), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses.

show abstract

“…These points can be crucial for the successful inclusion of high-k dielectrics in electron devices. CAFM has been demonstrated to be a very powerful tool to study the impact of the T A and high-k composition on the nanoscale conduction properties of HF-based high-k dielectrics [21] and the effect of gate dopant diffusion on the leakage current of Poly-Si/HfO 2 stacks [22]. In this context, AFM-related techniques are used in this paper to investigate, at the nanoscale, the effect of the percentage of diffused silicon and the material crystallization (derived from annealing processes at different temperatures T A ) on the conductivity and charge trapping of Al 2 O 3 stacks as gate dielectric for flash memories.…”

Section: Introductionmentioning

confidence: 99%

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Lanza

Porti

Nafrı́a

et al. 2011

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al 2 O 3 stacks for flash memories on the annealing temperature (T A ). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T A . The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al 2 O 3 stacks.Index Terms-Al 2 O 3 , atomic force microscopy (AFM), dielectric breakdown, electrical characterization, high-k.

show abstract

Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM

Cited by 35 publications

References 9 publications

On the use of two dimensional hexagonal boron nitride as dielectric

On the use of two dimensional hexagonal boron nitride as dielectric

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Contact Info

Product

Resources

About