On the use of two dimensional hexagonal boron nitride as dielectric

Hui, Fei; Pan, Chengfeng; Shi, Yuanyuan; Ji, Yanfeng; Grustan‐Gutierrez, Enric; Lanza, Mario

doi:10.1016/j.mee.2016.06.015

Cited by 109 publications

(93 citation statements)

References 160 publications

(201 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…41,64,65 The presented EBD//c value can be used as the standard value for confirming the quality of CVD-grown h-BN. 41,42,[63][64][65][66][67][68][69][70]…”

Section: Discussionmentioning

confidence: 99%

Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride

Hattori

Taniguchi

Nagashio

2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Dielectric breakdown has historically been of great interest from the perspectives of fundamental physics and electrical reliability. However, to date, the anisotropy in the dielectric breakdown has not been discussed. Here, we report an anisotropic dielectric breakdown strength (E) for h-BN, which is used as an ideal substrate for two-dimensional (2D) material devices. Under a well-controlled relative humidity, E values in the directions both normal and parallel to the c axis (E and E) were measured to be 3 and 12 MV/cm, respectively. When the crystal structure is changed from sp of cubic-BN (c-BN) to sp of h-BN, E for h-BN becomes smaller than that for c-BN, while E for h-BN drastically increases. Therefore, h-BN can possess a relatively high E concentrated only in the direction parallel to the c axis by conceding a weak bonding direction in the highly anisotropic crystal structure. This explains why the E for h-BN is higher than that for diamond. Moreover, the presented E value obtained from the high quality bulk h-BN crystal can be regarded as the standard for qualifying the crystallinity of h-BN layers grown via chemical vapor deposition for future electronic applications.

show abstract

“…41,64,65 The presented EBD//c value can be used as the standard value for confirming the quality of CVD-grown h-BN. 41,42,[63][64][65][66][67][68][69][70]…”

Section: Discussionmentioning

confidence: 99%

Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride

Hattori

Taniguchi

Nagashio

2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Figure 1 shows a typical sequence of I-V curves from the pristine state up to the catastrophic BD of the h-BN stack. [19,24,25] Figure 1b shows consecutive I-V curves measured up to the BD event. Such I-V curves show a sudden shift toward lower www.advelectronicmat.de potentials and higher currents (limited by the current compliance of the setup) only after voltages >1.2 V were applied.…”

Section: Breakdown Modementioning

confidence: 99%

Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric

Palumbo

Liang

Shi

et al. 2018

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

Multilayer hexagonal boron nitride (h‐BN) is an insulating 2D material that shows good interaction with graphene and MoS2, and it is considered a very promising dielectric for future 2D‐materials‐based electronic devices. Previous studies analyzed the dielectric properties of thick (>10 nm) mechanically exfoliated h‐BN nanoflakes (diameter < 20 μm) via conductive atomic force microscopy and applying very high voltages (>10 V); however, these methods are not scalable. In this work, the first device‐level reliability study of large area h‐BN dielectric stacks (grown via chemical vapor deposition) is presented, and the complete dielectric breakdown (BD) process is described. The experiments and calculations indicate that the BD process in metal/h‐BN/metal devices starts with a progressive current increase across the h‐BN stack until current densities up to 0.1 A cm−2 are reached. After that, the currents increase by sudden steps, which can be large (>1 order of magnitude, related to the BD of one/few h‐BN layers) or small (<1 order of magnitude, related to the lateral propagation of the BD). The bimodal BD process of h‐BN here presented (which cannot be detected via conductive atomic force microscopy) is essential to understand the reliability of 2D‐material‐based electronic devices using h‐BN as dielectric.

show abstract

“…Thus, materials with higher carrier mobility than bulk silicon have attracted significant attention. These candidate materials can be categorized as 3D and 2D high‐mobility materials …”

Section: Introductionmentioning

confidence: 99%

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

Palumbo

Wen

Lombardo

et al. 2019

Adv Funct Materials

Self Cite

163

104

View full text Add to dashboard Cite

Thin dielectric films are essential components of most micro-and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. Guaranteeing the reliability of thin dielectric films has become more challenging, in light of strong demand from the market for improved performance in electronic devices. The degradation and breakdown of thin dielectrics under normal device operation has an enormous technological importance and thus it is widely investigated in traditional dielectrics (e.g., SiO 2 , HfO 2 , and Al 2 O 3 ), and it should be further investigated in novel dielectric materials that might be used in future devices (e.g., layered dielectrics). Understanding not only the physical phenomena behind dielectric breakdown but also its statistics is crucial to ensure the reliability of modern and future electronic devices, and it can also be cleverly used for other applications, such as the fabrication of new-concept resistive switching devices (e.g., nonvolatile memories and electronic synapses). Here, the fundamentals of the dielectric breakdown phenomenon in traditional and future thin dielectrics are revised. The physical phenomena that trigger the onset, structural damage, breakdown statistics, device reliability, technological implications, and perspectives are described.

show abstract

On the use of two dimensional hexagonal boron nitride as dielectric

Cited by 109 publications

References 160 publications

Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride

Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride

Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

Contact Info

Product

Resources

About