Electron trapping in amorphous Al2O3

Salomone, L. Sambuco; Campabadal, F.; Faigon, A.

doi:10.1063/1.5005546

Cited by 5 publications

(2 citation statements)

References 41 publications

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“…On the other hand, the trap energy extracted by TAT analysis is because of electron trapping by the defect density related with oxygen vacancies in the Al 2 O 3 bulk, which could be amorphous or crystalline [21], generated during the deposition process. In addition, the height of the barrier extracted by Schottky emission analysis, φ B , is 2 eV, which is similar to that reported in [22], at 250 • C as the maximum deposition temperature. This parameter brings information about the defect's density in the metal/dielectric interface in the MIS capacitor.…”

Section: Discussionsupporting

confidence: 86%

Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD

et al. 2023

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We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al2O3) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insulator-semiconductor (MIS) capacitors with gate electrode areas of 3.6 × 10−5 cm2 and 6.4 × 10−5 cm2 at room temperature. The modeling results showed the presence of ohmic conduction, Poole Frenkel emission, Schottky emission, and trap-assisted tunneling mechanisms through the Al2O3 layer. Based on extracted results, we measured a dielectric conductivity of 5 × 10−15 S/cm at low electric fields, a barrier height at oxide/semiconductor interface of 2 eV, and an energy trap level into bandgap with respect to the conduction band of 3.11 eV. These results could be affected by defect density related to oxygen vacancies, dangling bonds, fixed charges, or interface traps, which generate conduction mechanisms through and over the dielectric energy barrier. In addition, a current density model is developed by considering the sum of dominant conduction mechanisms and results based on the finite element method for electronic devices, achieving a good match with experimental data.

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Section: Discussionsupporting

confidence: 86%

Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD

et al. 2023

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“…[ 68,82 ] In amorphous Al 2 O 3 , the electron energy loss spectra of atomic layer‐deposited films have demonstrated the existence of a 6.4 eV peak, [ 83 ] which has been attributed using DFT simulations to a neutral oxygen vacancy. Electron trapping in amorphous alumina films [ 84 ] and electron conduction through amorphous alumina films [ 85 ] are also attributed to the presence of oxygen vacancies in these films. Oxygen scavenging by metal films can lead to oxygen deficiency in oxide.…”

Section: Oxygen Deficiency In Amorphous Oxidesmentioning

confidence: 99%

On the Structure of Oxygen Deficient Amorphous Oxide Films

Strand,

Shluger

2023

Advanced Science

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Understanding defects in amorphous oxide films and heterostructures is vital to improving performance of microelectronic devices, thin‐film transistors, and electrocatalysis. However, to what extent the structure and properties of point defects in amorphous solids are similar to those in the crystalline phase are still debated. The validity of this analogy and the experimental and theoretical evidence of the effects of oxygen deficiency in amorphous oxide films are critically discussed. The authors start with the meaning and significance of defect models, such as “oxygen vacancy” in crystalline oxides, and then introduce experimental and computational methods used to study intrinsic defects in amorphous oxides and discuss their limitations and challenges. To test the validity of existing defect models, ab initio molecular dynamics is used with a non‐local density functional to model the structure and electronic properties of oxygen‐deficient amorphous alumina. Unlike some previous studies, the formation of deep defect states in the bandgap caused by the oxygen deficiency is found. Apart from atomistic structures analogous to crystal vacancies, the formation of more stable defect states characterized by the bond formation between under‐coordinated Al ions is shown. The limitations of such defect models and how they may be overcome in simulations are discussed.

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A high-k composite of TiO2–ZrO2 for charge trapping memory device with a large memory window under a low voltage

Zhu

Zhang

2021

J Mater Sci: Mater Electron

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Electron trapping in amorphous Al2O3

Cited by 5 publications

References 41 publications

Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD

Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD

On the Structure of Oxygen Deficient Amorphous Oxide Films

A high-k composite of TiO2–ZrO2 for charge trapping memory device with a large memory window under a low voltage

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