2017 IEEE Energy Conversion Congress and Exposition (ECCE) 2017
DOI: 10.1109/ecce.2017.8096478
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Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

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Cited by 43 publications
(15 citation statements)
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“…Therefore, without recalibration of the look-up table, the method tends to accelerate the detection of the component aging, through the temperature misestimate. In this sense, the temperature monitoring is also a tool for on-line prognostics, like what done off-line in [12] and [13]. If the maximum allowable current is actively limited using the estimated temperature as feedback, the current limitation tends to trigger more frequently with the age of the component, leading the converter to underperform and warn the user.…”
Section: Aging Of the Component And Prognosticsmentioning
confidence: 99%
“…Therefore, without recalibration of the look-up table, the method tends to accelerate the detection of the component aging, through the temperature misestimate. In this sense, the temperature monitoring is also a tool for on-line prognostics, like what done off-line in [12] and [13]. If the maximum allowable current is actively limited using the estimated temperature as feedback, the current limitation tends to trigger more frequently with the age of the component, leading the converter to underperform and warn the user.…”
Section: Aging Of the Component And Prognosticsmentioning
confidence: 99%
“…Under elevated temperature and gate voltage conditions, the gradual threshold voltage shift would lead to SiC die degradation, which causes the die resistance to change significantly. In [10], it is studied that the change in VDS is very fast at the beginning of test in an average variation of 0.81% for 1000 cycles (Vgs=15V, Tmin=175°C and ∆Tj=43°C). Therefore, the conventional measurement method using the on-state voltage of the MOSFET die cannot be applied to monitor the solder layer resistance increase because of the variable die voltage.…”
Section: Problem Statement In Conventional Methodsmentioning
confidence: 99%
“…The injected load current was 17 A. The online Tj is measured with isolated optical fiber system from Opsens [10]. Moreover, the measurement positions for the optical fibres as well as the voltage probes are carefully selected to get accurate measurement results.…”
Section: Test Conditionsmentioning
confidence: 99%
“…SiC MOSFETs show a significant degradation on threshold voltage, drain leakage current, and on-state resistance due to charge tunnelling into the gate oxide under repetitive SC stress, avalanche stress, and surge current stress [22][23][24]. The SiC MOSFET's package reliability was also investigated by power cycling test (PCT) and temperature cycling test in [25][26][27]. Despite these publications on various aspects of ruggedness and reliability of SiC MOSFETs under harsh conditions, there is not yet a survey or review paper available that comprehensively addresses the academic and industrial need to treat this important subject.…”
Section: Introductionmentioning
confidence: 99%
“…Variations of V th , I dss , and R on of the SiC MOSFETs with the increase of avalanche cycles [71] Variation of on-state voltage drop during power cycling[27] …”
mentioning
confidence: 99%