Ag-NPs doping enhanced resistive switching performance and induced changes in magnetic properties of NiFe₂O₄ thin films

Abstract

Ag-NPs doped NiFe 2 O 4 (NFO) thin films have been synthesized by the chemical solution deposition method. The effect of Ag-NPs incorporation on the resistive switching (RS) properties of NFO films with different doping concentrations in the range of 0 to 1.0% Ag was investigated. Results show that Ag-NPs doped NFO based memory devices perform resistive switching with much better uniformity and repeatability in switching cycles, and have excellent reliability at an appropriate Ag-NPs doping concentration (i.e. 0.5%) instead of very low and high doping concentrations (i.e. un-doped NFO film, 0.2% and 1.0% Ag). On the basis of analyses performed on current-voltage characteristics and their temperature dependence, it was found that the carrier transport occurred through the conducting filaments in the low resistance state with ohmic conduction, and in the high resistance state with Schottky emission. In addition, the temperature dependence of the resistance and magnetic behavior at HRS and LRS revealed that the physical origin of the RS mechanism, which involves the formation and rupture of the conducting paths, consists of oxygen vacancies and Ag atoms. Ag-NPs doping-induced changes in the saturation magnetization, associated with resistive switching, have been ascribed to variations in the oxygen vacancy concentration. The excellent endurance properties (>10 3 cycles), data retention (of >10 5 s at 298 and 358 K), and good cycle-to-cycle uniformity are observed in 0.5% Ag-NPs doped NFO-based memory devices.

Oxygen‐Deficient NiFe2O4 Spinel Nanoparticles as an Enhanced Electrocatalyst for the Oxygen Evolution Reaction

“…The small diffraction peak of Fe 2 O 3 may be due to decomposition of spinel NiFe 2 O 4 into Fe 2 O 3 by heat treatment. These results indicate that all the prepared NiFe 2 O 4 samples had well‐developed crystalline structure . However, the magnified XRD patterns within the range of 35–36° show a slight peak shift to higher angle (lower lattice parameter) for NiFe 2 O 4 −H 2 compared to NiFe 2 O 4 −P and NiFe 2 O 4 ‐Air (Figure b).…”

“…These results indicate that all the prepared NiFe 2 O 4 samples had well-developed crystalline structure. [39] However, the magnified XRD patterns within the range of 35-36°show a slight peak shift to higher angle (lower lattice parameter) for NiFe 2 O 4 À H 2 compared to NiFe 2 O 4 À P and NiFe 2 O 4 -Air ( Figure 2b). The slight peak shift may be due to abundant defects such as oxygen vacancies derived from hydrogen treatment, leading to some lattice contraction of the NiFe 2 O 4 .…”

Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

“…Intensive efforts have been devoted to overcome aforementioned challenges of RS parameters and to nd out actual physical mechanism. For this purpose, many approaches, such as metal doping, [14][15][16][17] embedding metal nanoparticles, 18,19 bilayer structure, [20][21][22] as well as annealing atmosphere treatment, [23][24][25][26] have been adopted to minimize the challenges. Among them, annealing atmosphere treatment is not only good compatibility with CMOS process, but also a feasible and effective way to improve the performance and reliability of RRAM devices.…”

“…More importantly, the combination of both RS and magnetization modulated by electrical means has been one of the crucial issues to be studied for their promising applications in the next-generation information storage, such as memory with electrical writing and magnetic read operation, multilevel storage to obtain four logic states, and multifunctional electro-magnetic integrated devices. 14,17,[45][46][47][48] Also, atmospheric thermal annealing was an effective cost-efficiently approach for magnetism applications. Li et al introduced atmospheric thermal annealing to BNnanoplate based spintronic nanodevice research, revealing defect-induced ferrimagnetism.…”

A sustainable resistive switching memory device based on organic keratin extracted from hair

“…This may be because conductive particles contribute to the formation of conductive laments and electron transport. [38][39][40] We also studied the resistance of the HRS and LRS of the doped device, as shown in Fig. 6b.…”