Multifunctional nonvolatile photoelectronic memory devices with multilevel storage and logic operation are expected to perform logic‐in‐memory computing tasks and overcome the von Neumann bottleneck. Multifunctional resistive random‐access memory (RRAM) devices that are environmentally friendly, durable, and low power consuming are promising candidates for commercial applications. In this work, low‐dimensional, lead‐free perovskite Cs3Bi2Br9 films with high weatherability are used to construct Ag/Cs3Bi2Br9/ITO RRAM devices with multilevel storage and logic operation functions. The devices demonstrate stable resistive switching (RS) up to 3200 cycles, an ultralow reset current (<0.4 mA), self‐compliance, and negative photoconductivity (NPC). Based on their NPC, the Cs3Bi2Br9 RRAM devices are capable of photoelectronic multilevel storage and “OR” logic operations when programmed photoelectronic inputs are given. The interface effect based on the electron detrapping/retrapping processes of Ag/Cs3Bi2Br9/ITO structure is the mechanism proposed for the RS behavior. This work provides new insights regarding the RS behavior of lead‐free perovskite RRAM devices by photoelectronic modulation and highlights the potential of lead‐free perovskite RRAM devices for stable multilevel storage and logic‐in‐memory computing functions.
In this Letter, spinel ferrite NiFe2O4 films prepared through pulsed laser deposition are used to fabricate Pt/NiFe2O4/Pt devices with the coexistence of unipolar resistive switching (URS) and bipolar resistive switching (BRS). The device demonstrated nonvolatile and stable resistive switching (RS) properties under URS and BRS modes. The current–voltage (I–V) fitting analysis and temperature dependence measurements suggested that one Pt/NiFe2O4/Pt RRAM cell follows two significantly different RS and carrier transport mechanisms under URS and BRS modes. Under URS mode, the carrier mechanism alternates between the high resistance state (HRS) with Schottky emission and low resistance state (LRS) with the Ohmic mechanism. In contrast, under BRS mode, carrier transport at HRS and LRS is dominated by space-charge-limited current and nearest-neighboring hopping, respectively. Finally, a physical model, combining oxygen ion (O2−) migration and electric field distribution simulated by COMSOL Multiphysics, is proposed to further clarify the coexistence of two distinct RS and carrier transport mechanisms in the single Pt/NiFe2O4/Pt RRAM device.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.