2019
DOI: 10.1039/c9ra01121h
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Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

Abstract: The resistive switching and magnetic properties can be enhanced by controlling oxygen vacancies via the annealing atmosphere effect.

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Cited by 41 publications
(19 citation statements)
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“…In order to acquire micromorphology observation and particle size distribution, the air‐dried samples were directly viewed by field‐emission scanning electron microscopy (SEM, JSM‐6330F). Particle size was obtained in terms of the Gauss distribution fitting (Yao et al, 2019). The surface‐associated mapping was also recorded.…”
Section: Methodsmentioning
confidence: 99%
“…In order to acquire micromorphology observation and particle size distribution, the air‐dried samples were directly viewed by field‐emission scanning electron microscopy (SEM, JSM‐6330F). Particle size was obtained in terms of the Gauss distribution fitting (Yao et al, 2019). The surface‐associated mapping was also recorded.…”
Section: Methodsmentioning
confidence: 99%
“…As in vacuum-based metal oxides, the solution-based RRAM the device-to-device variability can be reduced by decreasing device size, as depicted in Figure 24a. [172] On the other hand, the cycle-to-cycle variability of each solution-based metal oxide RRAM device is highly dependent on the production process (mainly the annealing method (Figure 24b), doping (Figure 24c), and ambient conditions (Figure 24d), [179,222,228] since it is an intrinsic characteristic of the device (resistive switching layer and their interface properties). Consideration of all these parameters ensures that the S-RRAM variability can be controlled and diminished.…”
Section: Variabilitymentioning
confidence: 99%
“…Bao and co‐workers reported the annealing atmosphere (air, argon, and oxygen) effect on the resistive switching behavior of spinel Co 3 O 4 thin films. [ 222 ] A better stability and uniformity (low forming voltage and cycle‐to‐cycle variability) was achieved for the Pt/Co 3 O 4 /Pt RRAM devices in a nitrogen atmosphere due to the formation of confined conductive filaments and the suppression of the oxygen vacancies dispersion. Recently, Ha and co‐workers studied the annealing influence on solution‐based zirconium oxide (ZrO x ) thin films in air and in an oxygen atmosphere.…”
Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning
confidence: 99%
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“…Chang et al [18] investigated the role of Fe 3 O 4 insertion layer to improve the reliability of Ag/Ta 2 O 5 /Pt resistive switching devices. Yao et al[19] examined the annealing atmospheric effect on resistive switching and magnetic properties of spinel Co 3 O 4 films.…”
mentioning
confidence: 99%