A sustainable resistive switching memory device based on organic keratin extracted from hair

Abstract

This study suggests that keratin is a potential biomaterial for the preparation of memory devices with non-toxicity, degradability and sustainability.

Analog Resistive Switching in Reduced Graphene Oxide and Chitosan‐Based Bio‐Resistive Random Access Memory Device for Neuromorphic Computing Applications

“…The present chitosan‐based device shows a typical unipolar resistive switching (URS) (Figure 2b), similar to the one reported on keratin. [ 37 ] Indeed, the URS has not been reported until now in the chitosan‐based RRAM device. The arrow marks on the I–V characteristics indicate the direction of the voltage sweep that we used during the measurements.…”

Recent advances in organic‐based materials for resistive memory applications

“…Recently, there is an emerging demand on the development of bio‐based materials for resistive memory devices. Compared with inorganic materials, bio‐based materials are renewable and environment friendly and usually exhibit superior biocompatibility, biodegradability, sustainability, and flexibility 39,50,131‐141 . Many biomaterials can be easily extracted from natural abundant resources and hence are of low expenditure.…”

“…Guo et al extracted organic keratin from hair (Figure 16D) and discovered that the related memory devices could maintain outstanding resistive characteristics after 150 consecutive WRER cycles (Figure 16E,F). 136 …”

“…E, Typical I–V curves of Ag/keratin/ITO with different laps. F, Endurance test of the device 136 . Copyright © 2019 The Royal Society of Chemistry.…”

Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

“…[1][2][3][4][5][6] These devices, in the simple structure of metal-insulator-metal (MIM), are based on the resistive switching effect in the active layer, where the resistance can be repeatably switched between a high resistance state (HRS) and a low resistance state (LRS) and sustained without any power supply. [7][8][9][10][11] Compared with the transition metal oxide (TMO)-based resistive random access memory (RRAM), the 2D-based NVRS devices have drawn much attention due to the atomically thin active layer thickness, the complex switching mechanisms involving interaction of defects and ions at the sharp interfaces, and the potential applications in exible memory fabrics and neuromorphic computing. [12][13][14][15] In 2018, the "atomristors" based on monolayer or few-layer transition metal dichalcogenides (TMDs), was rst demonstrated in vertical MIM conguration and show stable NVRS behavior with high ON/OFF ratio, fast switching speed and forming-free characteristics.…”