Aerosol-Assisted Chemical Vapor Deposition of Transparent Conductive Gallium−Indium−Oxide Films

Abstract

Aerosol assisted chemical vapor deposition (AACVD) reactions of GaMe 3 , InMe 3 , and 6 equiv of the donor functionalized alcohol, HOCH 2 CH 2 OMe, in toluene resulted in the deposition of colorless, transparent gallium-indium-oxide films at a range of temperatures (350-450 °C). The gallium-indium-oxide films were analyzed by a range of techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), glancingangle X-ray powder diffraction (XRD), and wavelength dispersive analysis of X-rays (WDX). The optimum growth temperature was found to be 450 °C, which produced transparent films with a composition of Ga 0.6 In 1.4 O 3 as determined by WDX. XPS confirmed the presence of indium, gallium, and oxygen in the films. Annealing these films at 1000 °C resulted in crystalline films, and glancing-angle powder XRD showed a gallium-substituted cubic In 2 O 3 lattice was adopted with a lattice parameter, a = 9.84 Å. AFM showed that the annealed films on quartz had a root-mean-square roughness of 94-200 nm, and the work function was measured to be 4.6 eV. The four point probe method was used to determine a sheet resistivity, R s = 83.3 Ω/square, and a low electrical resistivity value (for example 6.66 Â 10 -4 Ω cm in 80 nm sample thickness, as determined by side-on SEM for films deposited on glass).

Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates

“…Figure 5 shows the XRD patterns of pure GaInP (black), of gallium indium oxide (red), indium oxide (blue) and gallium phosphate (green), which suggest that our film is polycrystalline. The results are in a good agreement with literature [20][21][22].…”

“…SEM images of the GaInP nanofibers formed on n-Si substrates at different process times (10,20, and 25 minutes) are given in Fig. 3a-c, respectively.…”

Aerosol assisted chemical vapour deposition of transparent conductive aluminum-doped zinc oxide thin films from a zinc triflate precursor

“…The films exhibited good uniformity and coverage with deposition observed to occur on both the glass substrate and top plate as a result of thermophoretic effects [32]. Films exhibited strong adherence to the glass substrate, passing the Scotch© tape test and only being removed upon intense scratching with a steel scalpel.…”

Nanostructured thin film of iron tin oxide by aerosol assisted chemical vapour deposition using a new ferrocene containing heterobimetallic complex as single-source precursor

“…The thin film developed at 425 °C produced three broad Braggs peak at 26.6, 33.9 and 51.8°, and three other peaks at 54.7, 61.8 and 71.2°, indexed as cassiterite syn (ICDD 04-003-0974) [36], having a tetragonal system with the P42mnm (136) space group. The lattice dimensions a = b = 4.738 Å and c = 3.186 Å and no peak for iron oxide were observed; the decrease in the crystallite size and broadening of the peak suggests that the iron has become incorporated in the tin oxide lattice [37] due to small difference between the atomic radii of tin (0.71 nm) and iron (0.68 nm) without effecting the lattice, on the other hand iron also acts as crystallite inhibitor for tin dioxide. Thus iron can amalgamate, which increases the stacking fault density of tin dioxide.…”