Advantages of GeTeN material for phase change memory applications

Cheng, Peng; Wu, Liangcai; Zhang, Song; Zhou, Xilin; Zhu, Min; Rao, Feng; Liu, Bo; Feng, Shuai

doi:10.1016/j.jnoncrysol.2011.10.026

Cited by 26 publications

(10 citation statements)

References 13 publications

(11 reference statements)

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“…In comparison to the rhombohedral phase in GT, the cubic phase in SLL GT/Sb thin film is relatively less stable. 16 Besides, no new The phase change is accompanied by the sudden change of electrical resistivity as well optical reflectivity. In order to evaluate the phase-change speed, two consecutive picosecond laser pulses with different laser fluences were used.…”

Section: Resultsmentioning

confidence: 99%

Nanosecond Switching in Superlattice-Like GeTe/Sb Thin Film for High Speed and Low Power Phase Change Memory Application

Zhu

Zou

et al. 2016

ECS J. Solid State Sci. Technol.

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Superlattice-like GeTe/Sb thin films were investigated for their potential application in phase change memory. Compared with monolayer GeTe thin film, GeTe/Sb thin film has lower crystallization temperature (208°C), crystallization activation energy (2.38 eV) and thermal conductivity (0.15 W/(m·K)). In GeTe/Sb thin film, GeTe and Sb phases exist independently. The superlattice-like structure is observed even after annealing at 250°C for 10 min. The shorter phase change time is achieved for GeTe/Sb thin film (4.3 ns). The GeTe/Sb-based phase change memory devices show an operation speed of as fast as 9 ns and a low RESET operation power of 4.09 × 10−13 J.

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Section: Resultsmentioning

confidence: 99%

Nanosecond Switching in Superlattice-Like GeTe/Sb Thin Film for High Speed and Low Power Phase Change Memory Application

Zhu

Zou

et al. 2016

ECS J. Solid State Sci. Technol.

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“…According to previous reports, a small grain size could help to reduce the residue stress in the bulk of films and interfaces due to the relatively smaller probability for grain boundary diffusion or sliding. 23,24 In this respect, the (GaSb) 0.11 TST film is expected to be more stable as a PCM due to its uniform structure and small grain size.…”

Section: Resultsmentioning

confidence: 99%

Performance improvement in a Ti–Sb–Te phase change material by GaSb doping

et al. 2016

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Herein, the GaSb-doped Ti 0.09 Sb 0.38 Te 0.53 ĲTST) material is investigated and considered to be a potential candidate for phase change random access memory (PCM) application due to its overall good performance. With a high crystallization temperature of 220 °C, (GaSb) 0.11 ĲTi 0.09 Sb 0.38 T 0.53 ) 0.89 ((GaSb) 0.11 TST) exhibits a data retention of 10 y at 136.8 °C, which is much better than that of Ge 2 Sb 2 Te 5 as well as TST. For the (GaSb) 0.11 TST-based cell, an electric pulse as short as 5 ns can fulfill the SET operation, thus demonstrating an extremely rapid crystallization speed. Furthermore, the cell shows a significantly lower power consumption for SET/RESET reversible switching than that of the Ge 2 Sb 2 Te 5 -based cell. The programming cycles can reach 1 × 10 4 cycles with stability resistance of about a two orders of magnitude on/off ratio.

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“…(a) with (b), it can be found that not only the crystalline grains of Sb 44 Te 11 Se 45 film are obviously decreased after doping, which probably have reached nanometer order, but also the grains distribute more homogeneous over the surface. When the grain size becomes smaller, the residue stress in the bulk of the films and interfaces will be reduced due to relatively smaller probability for grain boundary diffusion or sliding . In addition, such uniform distribution of nanocrystallites can help to improve the stability of device operation, because the uniform crystallization would help for restraining the elemental separation .…”

Section: Resultsmentioning

confidence: 99%

Sb–Te–Se composite film with high‐thermal stability for phase‐change memory application

Chen

Song

Zhang

et al. 2015

Physica Status Solidi (a)

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The Sb–Te–Se ternary system with suitable composition material Sb44Te11Se45 is proposed for its brilliant thermal stability, which was fabricated by doping with Sb2Se3 to Sb2Te. Compared to the traditional Ge2Sb2Te5, Sb44Te11Se45 film exhibits a higher crystallization temperature of 220 °C, a larger active energy of 4.25 eV, along with ultra‐long data retention of 133.8 °C for 10 years, which means a brilliant thermal stability. It was found that Sb2Se3 doping could decrease the grain size, which makes Sb44Te11Se45 material a more stable material for phase‐change memory (PCM) application. For the PCM cell based on Sb44Te11Se45, the resistance ratio between amorphous and crystalline state is up to two orders of magnitude, sufficient for data resolution. From the view‐point of thermal stability, Sb44Te11Se45 composite film will be a potential phase‐change material for high‐temperature storage application.

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Advantages of GeTeN material for phase change memory applications

Cited by 26 publications

References 13 publications

Nanosecond Switching in Superlattice-Like GeTe/Sb Thin Film for High Speed and Low Power Phase Change Memory Application

Nanosecond Switching in Superlattice-Like GeTe/Sb Thin Film for High Speed and Low Power Phase Change Memory Application

Performance improvement in a Ti–Sb–Te phase change material by GaSb doping

Sb–Te–Se composite film with high‐thermal stability for phase‐change memory application

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