Nanosecond Switching in Superlattice-Like GeTe/Sb Thin Film for High Speed and Low Power Phase Change Memory Application

Abstract

Superlattice-like GeTe/Sb thin films were investigated for their potential application in phase change memory. Compared with monolayer GeTe thin film, GeTe/Sb thin film has lower crystallization temperature (208°C), crystallization activation energy (2.38 eV) and thermal conductivity (0.15 W/(m·K)). In GeTe/Sb thin film, GeTe and Sb phases exist independently. The superlattice-like structure is observed even after annealing at 250°C for 10 min. The shorter phase change time is achieved for GeTe/Sb thin film (4.3 ns). The GeTe/Sb-based phase change memory devices show an operation speed of as fast as 9 ns and a low RESET operation power of 4.09 × 10−13 J.

Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

“…This material shows not only low power consumption, but also fast speed (<10 ns) and good thermal stability ( E a = 2.86 eV). Hu et al also reported a [(GeTe) 4 nm /Sb 6nm ] 5 ‐superlattice device which had a fast speed (9 ns) and low power consumption (0.4 pJ) . Liu et al reported a multilayer [(SnSb 4 ) 30 nm /(SbSe) 20 nm ] 1 film that possessed fast switching speed (<5 ns) and good thermal stability (ten‐year‐retention temperature = 122 °C) .…”

Superlattice‐like Zn 15 Sb 85 /Ga 30 Sb 70 thin films for low power and ultrafast phase change memory application

“…By comparing the data retention of GST (85°C), it can be found that the all SLL ZS/GS thin films have better data reliability than GST. At the same time, the activation energy (E a ) of each thin film can be acquired from the slope of the straight line in the corresponding Kissinger plots [16] thin films increases to 0.2665, 0.3378 and 0.5116 nm. While the surface of the SLL thin films becomes slightly rougher after crystallisation.…”

“…At the same time, the activation energy ( E a ) of each thin film can be acquired from the slope of the straight line in the corresponding Kissinger plots [16] with the results of [ZS2/GS8] 5 : 2.1 eV, [ZS3/GS7] 5 : 2.8 eV, [ZS5/GS5] 5 : 3.1 eV, [ZS6/GS4] 5 : 3.0 eV, [ZS7/GS3] 5 :3.8 eV, respectively. It shows that E a also increases as the thickness of the GS layer.…”

“…Thus, the Te-free and Sb-rich thin films have been considered as the promising candidate for replacing GST. The superlattice-like (SLL) phase change films exhibit faster operating speeds and lower programming currents due to much lower thermal conductivity than monolayer films [16]. Moreover, the SLL thin films can combine the phase change performance of different composite layers to obtain an excellent comprehensive property [17].…”

Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films

“…15) and GeTe/Sb. 16 Ribaldone et al studied GeTe–InSbTe superlattices with different components through DFT. 17 Pandey et al studied the local structural changes and crystallization kinetics of ternary InSbTe films.…”