Performance improvement in a Ti–Sb–Te phase change material by GaSb doping

Abstract

Herein, the GaSb-doped Ti 0.09 Sb 0.38 Te 0.53 IJTST) material is investigated and considered to be a potential candidate for phase change random access memory (PCM) application due to its overall good performance. With a high crystallization temperature of 220 °C, (GaSb) 0.11 IJTi 0.09 Sb 0.38 T 0.53 ) 0.89 ((GaSb) 0.11 TST) exhibits a data retention of 10 y at 136.8 °C, which is much better than that of Ge 2 Sb 2 Te 5 as well as TST. For the (GaSb) 0.11 TST-based cell, an electric pulse as short as 5 ns can fulfill the SET operation, thus demonstrating an extremely rapid crystallization speed. Furthermore, the cell shows a significantly lower power consumption for SET/RESET reversible switching than that of the Ge 2 Sb 2 Te 5 -based cell. The programming cycles can reach 1 × 10 4 cycles with stability resistance of about a two orders of magnitude on/off ratio.

Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption

“…19 Statistically, enhancement in data retention generally brings lower operation speed in PCM, known as a contradictory nature. 20,21 Meanwhile, the paramount energy for the melt-quench process during Reset leads to the high power consumption in PCM, especially unfavorable for a system with a battery power supply.…”

“…Although the 10-year data retention of ∼85 °C and Set speed of ∼50 ns of GST-based PCM satisfy the requirements for some consumer electronic application scenarios, they fail to meet the requirements for automotive electronics, where the 10-year data retention should be 120 °C . Statistically, enhancement in data retention generally brings lower operation speed in PCM, known as a contradictory nature. , Meanwhile, the paramount energy for the melt-quench process during Reset leads to the high power consumption in PCM, especially unfavorable for a system with a battery power supply.…”