Advanced Si/sub 1-x/Ge/sub x/ source/drain and contact technologies for sub-70 nm CMOS

Öztürk, Mehmet C.; Liu, Jing; Mo, Hongxiang; Pesovic, N.

doi:10.1109/iedm.2002.1175856

Cited by 10 publications

(7 citation statements)

References 3 publications

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“…Recently, nickel germanosilicide was reported to form low resistivity contacts to Si 1Ϫx Ge x at ϳ400°C, with improved thermal stability for nickel thickness ϳ20 nm. 8 Therefore, a slight modification to the metal interconnect stack was explored to achieve even lower contact resistance to pϩ SiGe. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Low-Resistance Silicon-Germanium Contact Technology for Modular Integration of MEMS with Electronics

Eyoum

King

2004

J. Electrochem. Soc.

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Polycrystalline silicon-germanium ͑poly-SiGe͒ is a promising structural material for modular cofabrication of microelectromechanical ͑MEM͒ devices with electronics, for low-cost integrated microsystems. Low-resistance electrical connections between the poly-SiGe MEMS layer͑s͒ and integrated drive/sense electronics are required for high performance. This paper discusses approaches to achieving low contact resistance between a pϩ poly-SiGe film and an underlying metal interconnect made of Al-Si͑2%͒ and TiN capping layer. Nickel germanosilicide was used to achieve very low specific contact resistivity ͑less than 10 Ϫ7 ⍀ cm 2 ) for pϩ poly-SiGe deposited at temperatures compatible with completed complementary metal oxide semiconductor electronics ͑р450°C͒.

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Section: Resultsmentioning

confidence: 99%

Low-Resistance Silicon-Germanium Contact Technology for Modular Integration of MEMS with Electronics

Eyoum

King

2004

J. Electrochem. Soc.

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“…5 Since the contact resistivity is an exponential function of the metal-semiconductor barrier height, the contact resistivity can be substantially reduced by forming the contact on Si 1−x Ge x , whose bandgap is smaller than Si. [2][3][4][5] This is significant because the contact resistivity is the primary contributor to the MOSFET series resistance, which must be limited to a small fraction of the channel "on" resistance. 6 Since the contact resistivity advantage of Si 1−x Ge x is based on bandgap reduction, all factors that can potentially influence the Si 1−x Ge x bandgap must be carefully considered.…”

Section: The Effects Of Nickel Germanosilicide Contacts On the Biaxiamentioning

confidence: 99%

“…[2][3][4] For the commonly used silicides formed on Si ͑e.g., TiSi 2 and NiSi͒, the Fermi level is pinned near the Si midgap resulting in a Schottky barrier height approximately equal to half the Si bandgap. It has been shown that this is also true for the Ni/ Si 1−x Ge x system.…”

Section: The Effects Of Nickel Germanosilicide Contacts On the Biaxiamentioning

confidence: 99%

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

Chopra

Öztürk

Misra

et al. 2007

Applied Physics Letters

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When a thin Si1−xGex epitaxial layer is grown on Si, it is under biaxial compression. In this letter, it is shown that a nickel germanosilicide (NiSi1−xGex) layer formed on Si1−xGex can significantly reduce the in-plane compressive strain in Si1−xGex. It is proposed that the observed reduction is due to the biaxial tensile stress applied by the NiSi1−xGex layer. Because the Si1−xGex bandgap is a strong function of the strain, this is expected to have a strong impact on the metal-semiconductor barrier height and the contact resistivity of the interface if the metal Fermi level is pinned near the Si1−xGex midgap.

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“…3) Reduce contact resistance thereby normalized . Extremely low contact resistance in the range of cm has already been obtained from state-of-the-art Ni silicide technology [18], [19]. The implementation of such Ni silicidation process on Structure A would result in a normalized in the range of 10 m , which could lead to a of 26.6 GHz (4.7 times improvement).…”

Section: Assumingmentioning

confidence: 99%

RF Performance and Modeling of Si/SiGe Resonant Interband Tunneling Diodes

Jin

Chung

et al. 2005

IEEE Trans. Electron Devices

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The RF performance of two different Si-based resonant interband tunneling diodes (RITD) grown by low-temperature molecular beam epitaxy (LT-MBE) were studied. An RITD with an active region of B -doping plane/2 nm i-Si 0 5 Ge 0 5 1 nm i-Si/P -doping plane yielded a peak-to-valley current ratio (PVCR) of 1.14, resistive cutoff frequency ( 0 ) of 5.6 GHz, and a speed index of 23.3 mV/ps after rapid thermal annealing at 650 C for 1 min. To the authors' knowledge, these are the highest reported values for any epitaxially grown Si-based tunnel diode. Another RITD design with an active region of 1 nm p+ Si 0 6 Ge 0 4 B -doping plane/4-nm i-Si 0 6 Ge 0 4 2 nm i-Si/P -doping plane and annealed at 825 C for 1 min had a PVCR of 2.9, an 0 of 0.4 GHz, and a speed index of 0.2 mV/ps. A small signal model was established to fit the measured 11 data for both device designs. Approaches to increase 0 are suggested based on the comparison between these two diodes. The two devices exhibit substantially different junction capacitance/bias relationships, which may suggest the confined states in the -doped quantum well are preserved after annealing at lower temperatures but are reduced at higher temperature annealing. A comprehensive dc/RF semi-physical model was developed and implemented in Agilent advanced design system (ADS) software. Instabilities in the negative differential resistance (NDR) region during dc measurements were then simulated.

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Advanced Si/sub 1-x/Ge/sub x/ source/drain and contact technologies for sub-70 nm CMOS

Cited by 10 publications

References 3 publications

Low-Resistance Silicon-Germanium Contact Technology for Modular Integration of MEMS with Electronics

Low-Resistance Silicon-Germanium Contact Technology for Modular Integration of MEMS with Electronics

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

RF Performance and Modeling of Si/SiGe Resonant Interband Tunneling Diodes

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