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The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 mum. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.

We report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ϳ1 V at 1.55 m at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA/ cm 2. The noise equivalent power ͑NEP͒ is measured to be 4 fW/ Hz 0.5 at room temperature without any gating, which is similar to NEP of current InGaAs/ InP avalanche photodetectors in gated operation.