A photon detector with very high gain at low bias and at room temperature

Memiş, Ömer Gökalp; Katsnelson, A.; Kong, Soon Cheol; Mohseni, Hooman; Yan, Miu Chung; Zhang, Shuang; Hossain, T.; Jin, Niu; Adesida, I.

doi:10.1063/1.2802043

Cited by 39 publications

(24 citation statements)

References 14 publications

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“…1. As we demonstrated earlier, this charge compression has profound effects, including enhancement of detector efficiency and sensitivity [10]. The device relies on tunneling through an air gap for electrical signal.…”

Section: Device Conceptmentioning

confidence: 90%

“…For comparison, a SWIR-detecting avalanche photodiode (APD) operating in the linear regime has an NEP on the same order, of about ~5 × 10 −14 W/Hz 0.5 [8,9]. The basis for our detector comes from earlier work our group has done on a detector that involves a large absorbing region with a nanoinjecting sensing region [10][11][12]. The original detector has a large InGaAs absorbing area, capped by a thin layer of GaAsSb which acts as a trap for holes.…”

Section: Device Conceptmentioning

confidence: 99%

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An opto-electro-mechanical infrared photon detector with high internal gain at room temperature

et al. 2009

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Many applications require detectors with both high sensitivity and linearity, such as low light level imaging and quantum computing. Here we present an opto-electro-mechanical detector based on nano-injection and lateral charge compression that operates at the short infrared (SWIR) range. Electrical signal is generated by photo-induced changes in a nano-injector gap, and subsequent change of tunneling current. We present a theoretical model developed for the OEM detector, and it shows good agreement with the measured experimental results for both the mechanical and electrical properties of the device. The device shows a measured responsivity of 276 A/W, equivalent to 220 electrons per incoming photon, and an NEP of 3.53 x 10(-14) W/Hz(0.5) at room temperature. Although these results are already competing with common APDs in linear mode, we believe replacing the AFM tip with a dedicated nano-injector can improve the sensitivity significantly.

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Section: Device Conceptmentioning

confidence: 90%

Section: Device Conceptmentioning

confidence: 99%

An opto-electro-mechanical infrared photon detector with high internal gain at room temperature

et al. 2009

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“…EI detectors were introduced in 2007 31 . They have an internal amplification mechanism that is not based on avalanche.…”

Section: Methodsmentioning

confidence: 99%

Demonstration of Shot-noise-limited Swept Source OCT Without Balanced Detection

Fathipour

Schmoll²,

Bonakdar

et al. 2017

Sci Rep

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Optical coherence tomography (OCT) has been utilized in a rapidly growing number of clinical and scientific applications. In particular, swept source OCT (SS-OCT) has attracted many attentions due to its excellent performance. So far however, the limitations of existing photon detectors have prevented achieving shot-noise-limited sensitivity without using balanced-detection scheme in SS-OCT, even when superconducting single-photon detectors were used. Unfortunately, balanced-detection increases OCT system size and cost, as it requires many additional components to boost the laser power and maintain near ideal balanced performance across the whole optical bandwidth. Here we show for the first time that a photon detector is capable of achieving shot noise limited performance without using the balanced-detection technique in SS-OCT. We built a system using a so-called electron-injection photodetector, with a cutoff-wavelength of 1700 nm. Our system achieves a shot-noise-limited sensitivity of about −105 dB at a reference laser power of ~350 nW, which is more than 30 times lower laser power compared with the best-reported results. The high sensitivity of the electron-injection detector allows utilization of micron-scale tunable laser sources (e.g. VCSEL) and eliminates the need for fiber amplifiers and highly precise couplers, which are an essential part of the conventional SS-OCT systems.

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“…We have previously designed and developed the nano-injection mechanism on InP/GaAsSb/InGaAs structure [7], which can provide sensitive SWIR detection with low noise, avalanche-free amplification [8] at low voltages compatible with CMOS readout IC technologies. The nano-injection imagers which utilize this novel amplification method can suppress readout 978-1-4244-8168-2/10/$26.00 ©2010 IEEE IC noise and achieve high signal-to-noise levels compared to existing high-end technologies.…”

Section: Introductionmentioning

confidence: 99%

Short-wave infrared nano-injection imaging sensors

Memiş

Kohoutek

et al. 2010

2010 IEEE Sensors

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A novel nano-injection based imaging sensor is presented towards demanding applications in telecommunications, biophotonics, optical tomography, explosives detection and non-destructive material evaluation. The sensor can provide low noise levels concurrently with strong internal amplification, which results in a significant increase in the signal-to-noise levels compared to existing short-wave infrared imagers. The imager arrays are 320-by-256 pixels, with a pixel pitch of 30 µm. Post-hybridization, the imager test pixels shows internal amplification exceeding 2,000 electrons/photon with little excess noise (F~1.5) even at high amplification values. The imager shows a high signal to noise ratio at high frame rates and short integration times. Furthermore, the nano-injection imaging sensor shows significant sensitivity improvement over a high-end commercial short-wave infrared camera at similar settings, which highlights the benefits of implementing nanoinjection process in imaging sensors.

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A photon detector with very high gain at low bias and at room temperature

Cited by 39 publications

References 14 publications

An opto-electro-mechanical infrared photon detector with high internal gain at room temperature

An opto-electro-mechanical infrared photon detector with high internal gain at room temperature

Demonstration of Shot-noise-limited Swept Source OCT Without Balanced Detection

Short-wave infrared nano-injection imaging sensors

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