Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si

Sarafis, Panagiotis; Hourdakis, E.; Nassiopoulou, A. G.; Neve, Cesar Roda; Ali, Khaled Ben; Raskin, Jean‐Pierre

doi:10.1016/j.sse.2013.04.026

Cited by 26 publications

(7 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The observed reduction of signal attenuation a and the increase of the quality factor Q of the CPW TLine on PSi versus bulk Si is attributed to the reduction of the material loss tangent and dielectric permittivity through nanostructuring. As shown previously by the authors, the achieved low permittivity of porous Si at high porosities shows advantages in many RF and millimeter-wave devices, namely, high-characteristic impedance of the CPW TLines [ 5 ], inductors operating at higher frequencies [ 29 , 30 ] and antennas with reduced surface waves induced into the substrate can be obtained.…”

Section: Resultsmentioning

confidence: 72%

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Sarafis

Nassiopoulou

2014

Nanoscale Res Lett

View full text Add to dashboard Cite

In this work, the dielectric properties of porous Si for its use as a local substrate material for the integration on the Si wafer of millimeter-wave devices were investigated in the frequency range 140 to 210 GHz. Broadband electrical characterization of coplanar waveguide transmission lines (CPW TLines), formed on the porous Si layer, was used in this respect. It was shown that the dielectric parameters of porous Si (dielectric permittivity and loss tangent) in the above frequency range have values similar to those obtained at lower frequencies (1 to 40 GHz). More specifically, for the samples used, the obtained values were approximately 3.12 ± 0.05 and 0.023 ± 0.005, respectively. Finally, a comparison was made between the performance of the CPW TLines on a 150-μm-thick porous Si layer and on three other radiofrequency (RF) substrates, namely, on trap-rich high-resistivity Si (trap-rich HR Si), on a standard complementary metal-oxide-semiconductor (CMOS) Si wafer (p-type, resistivity 1 to 10 Ω.cm) and on quartz.PACS84.40.-x; 77.22.Ch; 81.05.Rm

show abstract

Section: Resultsmentioning

confidence: 72%

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Sarafis

Nassiopoulou

2014

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…To overcome this drawback, the RF lossy components can be integrated on insulating porous silicon (PS) substrates [4][5][6][7]. Indeed, the increase of performances of inductors, transmission lines and filters integrated on PS have been already reported [8][9][10]. In this context, the silicon/porous silicon mixed substrate becomes a serious alternative to silicon for the monolithic integration of RF circuits [11].…”

Section: Introductionmentioning

confidence: 99%

Monolithic integration of low-pass filters with ESD protections on p + silicon/porous silicon substrates

Capelle

Billoue

Concord

et al. 2016

Solid-State Electronics

View full text Add to dashboard Cite

“…In these ICs, high-performance passive devices, such as transmission lines [13], [14], inductors [15], and filters [16], play a crucial role. The need for more compact circuits has created a need for the engineering of high capacitance density capacitors, since they, along with other passives, take up most of the die space in such applications.…”

Section: Introductionmentioning

confidence: 99%

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Hourdakis

Travlos

Nassiopoulou

2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

We report on a high-performance metal-insulatormetal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 −8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent <0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density. IndexTerms-Anodic alumina, high-k dielectric, metal-insulator-metal (MIM) capacitor.

show abstract

Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si

Cited by 26 publications

References 33 publications

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Monolithic integration of low-pass filters with ESD protections on p + silicon/porous silicon substrates

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Contact Info

Product

Resources

About