High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Hourdakis, E.; Travlos, Anastassios; Nassiopoulou, A. G.

doi:10.1109/ted.2015.2411771

Cited by 11 publications

(4 citation statements)

References 20 publications

(31 reference statements)

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“…As can be seen from Figure 5b,c, there are a large number of charge traps near the interface between electrodes and dielectric layers, and the electrons still become inactive when the frequency increases [41]. Therefore, the high bandgap barrier capacitor has fewer charge traps near the surface of the dielectric layer, or these traps make the capacitance density only function in the low-frequency range [42,43]. In either case, the above two situations are conducive to maintaining the capacitance density of Al 2 O 3 MIM capacitors stable with frequency.…”

Section: Resultsmentioning

confidence: 99%

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Xiong

Zhao³

et al. 2022

Molecules

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This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al2O3-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm−2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10−10 A·cm−2, and quadratic voltage coefficient of 303.6 ppm·V−2. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm−2 and 0.25 fF·µm−2. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.

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Section: Resultsmentioning

confidence: 99%

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Xiong

Zhao³

et al. 2022

Molecules

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“…Anodic alumina and atomic layer deposited (ALD) HfO 2 were tested as dielectrics for the MIM capacitors. Barriertype anodic alumina was chosen because of its demonstrated quality as a dielectric and its reduced leakage current due to the reduction of unwanted Al protrusions during the anodization process [22,23]. For the creation of the alumina, the samples were anodized in a home-made electrolytic cell using an aqueous solution of citric acid (1% wt.)…”

Section: Sample Fabricationmentioning

confidence: 99%

Metal–insulator–metal micro-capacitors for integrated energy storage up to 10⁵ Hz

Hourdakis

Botzakaki

Xanthopoulos

2022

J. Phys. D: Appl. Phys.

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Metal-Insulator-Metal (MIM) micro-capacitors for use in integrated energy storage applications are presented. A new, simple and batch Si processing compatible method for the creation of high aspect ratio metallic 3D structures on the surface of a Si substrate is described. The method consists of creating an array of Si nanopillars and then depositing Al at a small angle off the vertical while rotating the sample. Using this method, the effective area of the samples is increased by a factor of 3.8. Various capacitors are created using the described 3D structures as the lower electrode, with anodic alumina and ALD deposited HfO2 as the dielectric. Al and Cu top electrodes are also investigated. Large values of capacitance densities as high as 3.2μF/cm2 are achieved. All capacitors are demonstrated to possess small values of series resistances and stable operation up to a frequency of 105Hz. These results make the presented MIM capacitors exceed the state-of-the-art while maintaining a simple and integrable fabrication scheme which renders them very interesting for energy storage applications where operational frequencies larger than 1kHz are required, as is the case in several vibrational energy harvesters.

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“…Traditional solid‐state microcapacitors, such as those using the metal–insulator–metal (MIM) and metal–insulator‐semiconductor (MIS) structures, are intensively studied for several applications. On‐chip MIM microcapacitors are mainly studied for their use in radiofrequency (RF) integrated circuits (ICs) . The main requirements in that case are to increase the capacitance density and reduce the leakage current.…”

Section: Introductionmentioning

confidence: 99%

“…To that end, many high‐ k dielectrics and dielectric stacks have been explored as the insulator . Furthermore, 3D structuring of the electrodes has been studied for increasing the effective capacitor surface area . In the case of MIS capacitors, in addition to their use in typical 2D field‐effect transistors (FETs), significant work has been conducted in 3D‐structured devices in applications such as decoupling capacitors, sensors, and FETs based on Si nanowires .…”

Section: Introductionmentioning

confidence: 99%

Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress

Hourdakis

Nassiopoulou

2020

Physica Status Solidi (a)

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Autonomous sensor systems and networks are of increasing demand toward the realization of the Internet of Things (IoT). In this respect, integrated devices for energy storage and management, such as microcapacitors and microbatteries, are intensively studied. Their integration with Si electronics is highly desirable, as it offers important advantages related to fabrication simplicity and cost reduction. Moreover, microcapacitors as compared with microbatteries offer additional advantages, including a theoretically infinite number of charge/discharge cycles, which makes them more appropriate for truly autonomous systems. They thus constitute the focus herein. Their basic characteristics for use in energy storage are discussed, and their interdependence is demonstrated, along with the demonstration that those characteristics cannot be independently optimized for energy storage. The two types of existing microcapacitors, namely the solid‐state microcapacitors and the microsupercapacitors, are presented in terms of their fabrication and integration schemes and their energy‐storage characteristics. Their advantages and disadvantages for the specific applications are analyzed. The usefulness of solid‐state microcapacitors in the above application, despite their significantly lower capacitance density compared with microsupercapacitors, is demonstrated, attributed to their integration maturity with standard complimentary metal‐oxide‐semiconductor (CMOS) processing, in addition to their larger charging voltages and maximum frequencies of operation.

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High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Cited by 11 publications

References 20 publications

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Metal–insulator–metal micro-capacitors for integrated energy storage up to 10⁵ Hz

Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress

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High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Cited by 11 publications

References 20 publications

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Metal–insulator–metal micro-capacitors for integrated energy storage up to 105 Hz

Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress

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Product

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Metal–insulator–metal micro-capacitors for integrated energy storage up to 10⁵ Hz