“…More generally, offering a wide variety of useful surface morphologies, crystal structures, interface features, and attractive physical and chemical properties such as large band gap, low interface state density, and excellent thermal stability, these oxides may serve as building blocks for electronic components or system parts such as various types of capacitors, energy storage and flash devices, metal‐oxide‐semiconductor devices, multilevel interconnections, or multifunctional protective coatings. [ 1,2 ] While Nb 2 O 5 , TiO 2 , or even HfO 2 films often exhibit semiconductive properties or readily allow dielectric‐to‐semiconductor transition, ZrO 2 seems advantageous in this regard because special efforts would be required to make the full zirconium oxide oxygen deficient and potentially semiconductive. Therefore, its stable chemical composition and stoichiometry, microstructure, relatively high permittivity (22–24), large band gap (≈5.8 eV), exceptional chemical and thermal stability, and reportedly good high‐frequency dielectric performance place ZrO 2 high up on the list of multipurpose dielectric applications.…”