Accommodation of SiGe strain on a universally compliant porous silicon substrate

Berbézier, Isabelle; Aqua, Jean-Noël; Aouassa, Mansour; Favre, Luc; Escoubas, S.; Gouyé, A.; Ronda, A.

doi:10.1103/physrevb.90.035315

Cited by 26 publications

(28 citation statements)

References 34 publications

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“…This situation corresponds to the PSi heated at High Temperature (HTPSi). It was demonstrated previously that during heating (at T >950 ° C ) a tensile strain is built-in HTPSi due to the desorption of the volatile species incorporated in PSi during the electrochemical fabrication process 56 . The pre-strain produces a decrease of the effective misfit experienced by the deposited SiGe layer.…”

Section: Resultsmentioning

confidence: 99%

New strategies for producing defect free SiGe strained nanolayers

David

Aqua

Liu

et al. 2018

Sci Rep

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Strain engineering is seen as a cost-effective way to improve the properties of electronic devices. However, this technique is limited by the development of the Asarro Tiller Grinfeld growth instability and nucleation of dislocations. Two strain engineering processes have been developed, fabrication of stretchable nanomembranes by deposition of SiGe on a sacrificial compliant substrate and use of lateral stressors to strain SiGe on Silicon On Insulator. Here, we investigate the influence of substrate softness and pre-strain on growth instability and nucleation of dislocations. We show that while a soft pseudo-substrate could significantly enhance the growth rate of the instability in specific conditions, no effet is seen for SiGe heteroepitaxy, because of the normalized thickness of the layers. Such results were obtained for substrates up to 10 times softer than bulk silicon. The theoretical predictions are supported by experimental results obtained first on moderately soft Silicon On Insulator and second on highly soft porous silicon. On the contrary, the use of a tensily pre-strained substrate is far more efficient to inhibit both the development of the instability and the nucleation of misfit dislocations. Such inhibitions are nicely observed during the heteroepitaxy of SiGe on pre-strained porous silicon.

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Section: Resultsmentioning

confidence: 99%

New strategies for producing defect free SiGe strained nanolayers

David

Aqua

Liu

et al. 2018

Sci Rep

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“…Therefore, it is expected to be compliant during the epitaxial growth. Several attempts have been done to grow SiGe, GaAs, GaN, and more recently Ge on mPSi, but only minor enhancements have been accomplished using this technique. This is mainly related to the instability of mPSi, which recrystallizes during the epitaxial growth due to the high temperatures utilized in this process (i.e., morphology changes result in the loss of its flexibility and compliance).…”

Section: Introductionmentioning

confidence: 99%

Graphene–Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy

Boucherif

Kolhatkar³

et al. 2017

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The ultimate performance of a solid state device is limited by the restricted number of crystalline substrates that are available for epitaxial growth. As a result, only a small fraction of semiconductors are usable. This study describes a novel concept for a tunable compliant substrate for epitaxy, based on a graphene-porous silicon nanocomposite, which extends the range of available lattice constants for epitaxial semiconductor alloys. The presence of graphene and its effect on the strain of the porous layer lattice parameter are discussed in detail and new remarkable properties are demonstrated. These include thermal stability up to 900 °C, lattice tuning up to 0.9 % mismatch, and compliance under stress for virtual substrate thicknesses of several micrometers. A theoretical model is proposed to define the compliant substrate design rules. These advances lay the foundation for the fabrication of a compliant substrate that could unlock the lattice constant restrictions for defect-free new epitaxial semiconductor alloys and devices.

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“…. Â 0 @ ik x ½sinhðkHÞ À kh coshðkHÞ=k ik y ½ðsinhðkHÞ À kh coshðkHÞÞ k kH sinhðkHÞ 1 A h 1 ðkÞ: (12) Given this solution for the C i s and thence for u (given explicitly in Appendix), one can compute the elastic energy density on the lm surface at z ¼ H(r), that reads E ¼ E 0 þ E 1 with E 0 given in (9) and…”

Section: Finite-size Elasticitymentioning

confidence: 99%

“…Different techniques are available for the production of crystalline NM on different kinds of support. [9][10][11][12][13] The resulting NM can be deformed and are attractive for exible optoelectronics, photonics and nanoelectronics, e.g. in radiofrequency or thermally degradable devices, magnetotransport systems, micromechanical systems, infrared phototransistors and also for biological applications.…”

Section: Introductionmentioning

confidence: 99%