In recent years, experimental demonstration of ferroelectric tunnel junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating these perovskite materials into conventional silicon memory technology remains challenging due to their lack of compatibility with the complementary metal oxide semiconductor process (CMOS). This communication reports the fabrication of an FTJ based on a CMOS-compatible tunnel barrier HfZrO (6 unit cells thick) on an equally CMOS-compatible TiN electrode. Analysis of the FTJ by grazing angle incidence X-ray diffraction confirmed the formation of the noncentrosymmetric orthorhombic phase (Pbc2, ferroelectric phase). The FTJ characterization is followed by the reconstruction of the electrostatic potential profile in the as-grown TiN/HfZrO/Pt heterostructure. A direct tunneling current model across a trapezoidal barrier was used to correlate the electronic and electrical properties of our FTJ devices. The good agreement between the experimental and theoretical model attests to the tunneling electroresistance effect (TER) in our FTJ device. A TER ratio of ∼15 was calculated for the present FTJ device at low read voltage (+0.2 V). This study suggests that HfZrO is a promising candidate for integration into conventional Si memory technology.

The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

Four tunnel junction (TJ) designs for multijunction (MJ) solar cells under high concentration are studied to determine the peak tunnelling current and resistance change as a function of the doping concentration. These four TJ designs are: AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs. Time‐dependent and time‐average methods are used to experimentally characterize the entire current–voltage profile of TJ mesa structures. Experimentally calibrated numerical models are used to determine the minimum doping concentration required for each TJ design to operate within a MJ solar cell up to 2000‐suns concentration. The AlGaAs/GaAs TJ design is found to require the least doping concentration to reach a resistance of <10−4 Ω cm2 followed by the GaAs/GaAs TJ and finally the AlGaAs/AlGaAs TJ. The AlGaAs/InGaP TJ is only able to obtain resistances of ≥5 × 10−4 Ω cm2 within the range of doping concentrations studied. Copyright © 2010 John Wiley & Sons, Ltd.

In the field of forensic science, we have recently introduced Raman imaging as a promising nondestructive technique to efficiently recover obliterated serial numbers in polycarbonate. The present study is extending the investigation toward different polymers for the reconstruction of abraded information by Raman spectroscopy. Samples of polyethylene, nylon, and nylatron, which are mainly used in items such as firearms, banknotes, and package materials, are investigated by monitoring the vibrational modes which are most susceptible to peak shifts and changes in the full width at half-maximum (fwhm) and peak intensity ratios. In all cases, the most affected peak depends on the polymer’s 3D structure and displays a ∼1 cm–1 shift and a broadening above ∼2 cm–1, as well as a relative intensity change of over 50%, more than enough for a successful recovery through confocal imaging. Depending on the polymer’s structural arrangement, any of the three contributions prevails for the strongest contrast. The propagation of the plastic deformations is mainly affected by the Young’s modulus of the material, due to a change in its elasticity. The shift, the width, and the relative intensity of the Raman peaks being three independent parameters, they can be correlated to enhance the contrast and thus to accelerate the image acquisition or to enhance statistical significance.

In forensic sciences, there is an increasing demand for nondestructive and reliable methods to retrieve obliterated information in polymers. This study demonstrates a case study for the potential of Raman spectroscopy to reconstruct abraded serial numbers. Residual strain and local variations in the structural arrangement are nondestructively imaged through peak shifts and variations of the full width at half-maximum of specific Raman lines, respectively. We qualitatively validate our approach by successfully recovering an obliterated letter stamped with a pressure of ∼170 MPa in a polycarbonate sample, with a subsequent quantitative statistical analysis. The detection threshold is estimated from the propagation depth of plastic deformations to a value of ∼750-800 μm, substantially larger than typical obliteration depths, 200 μm in our case for an initial profile depth of 120 μm.