When finite-size effects dictate the growth dynamics on strained freestanding nanomembranes

Mezaguer, Mourad; Ouahioune, Nedjma; Aqua, Jean-Noël

doi:10.1039/c9na00741e

Cited by 1 publication

(1 citation statement)

References 37 publications

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“…. Contrarily to the case where the lower layer surface is free of stress [48], in our current conditions, the flat film solution does not depend on the ratio e/htot, and there is no strain sharing between the film and the substrate.…”

Section: Simulationsmentioning

confidence: 80%

New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET

David¹,

Berbézier

Aqua³

et al. 2020

ACS Appl. Mater. Interfaces

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We report a novel approach for engineering tensely strained Si layers on a relaxed Silicon Germanium On Insulator (SGOI) film using a combination of condensation, annealing and epitaxy in selected conditions well chosen based on elastic simulations. The study evidences the remarkable role of SiO2 buried oxide layer (BOX) on the elastic behavior of the system. We show that tensely strained Si can be engineered by using alternatively rigidity (at low temperature) and viscoelasticity (at high temperature) of the SiO2 substrate. In these conditions, we get a Si strained layer perfectly flat and free of defects on top of relaxed Si1−xGex. We found very specific annealing conditions to relax SGOI while keeping an homogeneous Ge concentration and an excellent thickness uniformity resulting from the viscoelasticity of SiO2 at this temperature, which would allow layer by layer matter redistribution.Remarkably, Si layer epitaxially grown on relaxed SGOI remains fully strained with -0.85 % tensile strain. The absence of strain sharing (between Si1−xGex and Si) is explained by the rigidity of the Si1−xGex/BOX interface at low temperature. Elastic simulations of the real system show that, due to the very specific elastic characteristics of SiO2, there are unique experimental conditions that both relax Si1−xGex and keep Si strained. Various epitaxial processes could be revisited in the light of these new results. The generic and simple process implemented here meets all the requirements of the microelectronics industry and should be rapidly integrated in the fabrication lines of large multifinger 2.5 V n-type MOSFET on SOI used for RF-switches applications and for many other applications.

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Section: Simulationsmentioning

confidence: 80%

New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET

David¹,

Berbézier

Aqua³

et al. 2020

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

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When finite-size effects dictate the growth dynamics on strained freestanding nanomembranes

Abstract: Strain-sharing and finite-size effects can strongly inhibit or accelerate the growth dynamics on heteroepitaxial freestanding nanomembranes.

Cited by 1 publication

References 37 publications

New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET

New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET

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