Acceptor State of Gold in Silicon—Resolution of an Anomaly

Abstract

We propose that a severe anomaly among the parameters of the gold acceptor state in silicon can be resolved by taking into account the temperature dependence of all the parameters. The temperature variation of most consequence is that of the trap energy level with respect to the band edges. We show that if the trap maintains a constant relative position in the gap, the resulting corrections to the activation energies place the trap nearly 0.1 eV higher in the gap at 300°K than was supposed, and all of the available data are brought into agreement.

Semiconductor measurement technology

“…[10] concluded from emission rate data as a function of temperature that the level is 0.59 eV above the valence band. Parillo and Johnson [23], also from emission rate measurements, concluded that the level is 0.72 ± 0.01 eV above the valence band. Collins et at.…”

“…Note 788, pp. [18][19][20][21][22][23][24] but changes were made in the values of some of the parameters. For the temperature dependence of the energy band gap, E -E , the electron effective mass, m , c V e and the hole effective mass, m , the polyn nomial fits published earlier (NBS Spec.…”

“…400-4, pp. [15][16][17][18][19][20][21][22][23] were used. The lat tice and impurity mobilities, calculated as given in Tech.…”

“…( ARPA/NBS Workshop IV. Surface Analysis for Silicon Devices, Gaithersburg, Maryland, April [23][24]1975.…”

“…Electron beam induced current response and unmodulated 0.633-Mm laser beam induced current response of a 0.76-mm square, unbiased, silicon p-n junction diode 27 j ! iv PAGE '21. Measured and calculated normalized vibration amplitudes of ultrasonic bonding tools mounted in inverted positions 1 22. Beam-lead force indicator as supplied with the beam-lead bonder 23.…”