AC performance of optically controlled MOSFET

Abstract

Advances in CMOS technology have made MOSFET a serious contender at RF. High frequency performance of the device is characterized by transit frequency f t , maximum frequency of oscillation f max , minimum noise figure NF min . This paper presents above figures of merits for optically controlled Silicon N-MOSFET, illuminated by optical source of photon energy greater than bandgap of Silicon. The figures of merit show improvement as compared to dark condition, indicating application of device as potential candidate in optoelectronic applications.

An Investigation of DC Characteristics in Multifinger Optically Illuminated MOSFET

“…The direct illumination of the gate results in generation of excess electron hole pairs due to absorption of radiation in depletion region. The excess carriers generated cause change in gate voltage due to photo voltage, VOP as reported in [14,15]. This is due to the fact that the drain current becomes almost independent of drain voltage at higher drain voltages when device is in strong inversion.…”

Evaluation of Optically Illuminated Mosfet Characteristics by Tcad Simulation

“…Several modifications in the typical bulk structure have been proposed for MOSFET at RF [4]. One of the structure is a multifinger MOSFET, which is modelled and analysed by Jain et al [13][14] [15]. Another proposed device structures considered for present analysis is standard LDD MOSFET.…”

Power Gain Analysis of Optically Illuminated MOSFET

“…The figure represents a single finger operated at RF for analysis which has been in [14]. Optical radiation is perpendicular to the surface and the wavelength of radiation is higher than that of silicon band-gap energy and is considered to be of 830 nm for simulation purpose.…”